An ultra low cost Bias Tee unit

Carvalho, Juliana Barbosa de; Mosso, Marbey M.; Magri, Vanessa P. R.; Souza, Jorge A. M.; Navarro, Gidy Carolina Florez; Filho, Rogerio N. Rebello; Barbosa, Gelza M.

doi:10.1109/imoc.2011.6169264

Cited by 7 publications

(3 citation statements)

References 2 publications

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“…A simple way to implement a bias voltage source involves using a bias tee [16], [17], [18]. The bias tee comprises a capacitor and a bias element.…”

Section: Conventional Bias Teementioning

confidence: 99%

10Gb/s burst-mode driver circuit with on-chip bias switch for in-Vehicle optical networks

Ito

Takahashi

Nakamura

et al. 2023

IEICE Electron. Express

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The recent progress of in-vehicle communication networks has been highlighted by the intensive investigation of optical packet communication systems using a modulation and detection device. This paper proposes a burst-mode driver circuit with an on-chip bias switch to achieve a stable and quick response in bias switching operation. The proposed circuit comprises a driver core and two types of bias circuits. Moreover, the proposed circuit changes output bias voltages using a MOS transistor as a switch. To verify the operating principle, we design the proposed circuit using a high-voltage tolerant 65-nm CMOS technology and obtain the post-layout simulations and measurement results. As a result, we achieve quick bias switching operation with 90% faster response time than the conventional one.

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“…A simple way to implement a bias voltage source involves using a bias tee [16], [17], [18]. The bias tee comprises a capacitor and a bias element.…”

Section: Conventional Bias Teementioning

confidence: 99%

10Gb/s burst-mode driver circuit with on-chip bias switch for in-Vehicle optical networks

Ito

Takahashi

Nakamura

et al. 2023

IEICE Electron. Express

View full text Add to dashboard Cite

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“…It is a three-port network where the input and output ports are used for the microwave signals and the third port is connected to DC supply. [1][2][3][4][5] In the bias tee structure, capacitor usually blocks the DC from the radiofrequency (RF) signal at the input port and the inductor choke blocks the RF transmission to the DC circuit path. Commonly, in the microwave industry, many capacitors are easily available with high-quality factors up to millimeter-wave frequencies.…”

Section: Introductionmentioning

confidence: 99%

“…A bias tee network plays a critical role in separating a direct current (DC) bias source from the microwave signal of input and output ports in any active circuit, for example, a low noise amplifier, oscillator, mixer, or switching circuit. It is a three‐port network where the input and output ports are used for the microwave signals and the third port is connected to DC supply 1–5 . In the bias tee structure, capacitor usually blocks the DC from the radiofrequency (RF) signal at the input port and the inductor choke blocks the RF transmission to the DC circuit path.…”

Section: Introductionmentioning

confidence: 99%

A low‐cost broadband millimeter‐wave bias tee network using SICL technology

Shukla,

Mukherjee

2023

Micro & Optical Tech Letters

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This article presents a substrate integrated coaxial line (SICL)‐based low‐cost bias tee network operating in K‐ and Ka‐band (20–29 GHz). A butterfly stub is introduced in the direct current (DC) circuit path for the radiofrequency (RF) isolation. A single‐layer ceramic capacitor is used along the RF mainline to provide the DC isolation. The size of the proposed circuit is , where is the guided wavelength at the center frequency of 24.5 GHz. The proposed design exhibits 0.5–1 dB insertion loss in 20–25 GHz and 1–2 dB insertion loss in 25–29 GHz, along with more than 30 dB isolation between RF and DC circuits with good impedance matching. The isolation is improved by adding a series of butterfly stubs. Moreover, a design method for realizing a mounting pad to connect the surface‐mount device (SMD) capacitor with the SICL line is proposed. The proposed method helps integrate SMD component in the SICL environment. The parasitic effects of the pad are analyzed with the help of an equivalent circuit. This circuit is most suitable for 5G FR2 (millimeter‐wave) band application.

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