An Ultra Low-Loss Silicon-Micromachined Waveguide Filter for D-Band Telecommunication Applications

Campion, James; Glubokov, Oleksandr; Gómez, Andrés Ávila; Krivovitca, Aleksandr; Shah, Umer; Bolander, Lars; Li, Yinggang; Oberhammer, Joachim

doi:10.1109/mwsym.2018.8439601

Cited by 26 publications

(13 citation statements)

References 10 publications

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“…Fabrication tolerances and sidewall slope significantly degrade the desired RF performance of the final devices [27], [28]. Many researchers suffered from these [16], [32], [41]- [43] and started to be aware of the gravity of these problems [42], [44]. Table III summarizes the key performance metrics of typical reported rectangular waveguide filters based on the DRIE technique at frequencies above 100 GHz.…”

Section: Effects Of Fabrication Tolerances On Filter Performancementioning

confidence: 99%

“…In [15], the first D-band waveguide filter based on deep reactive ion etching (DRIE) technology was reported with the lowest IL of 0.45 dB in passband, although for a 15% (three-pole) or 11.5% (five-pole) fractional bandwidth, the unloaded quality factor Q u of the fabricated filter was estimated to reach 163 (five-pole), and the return losses were not characterized, which demonstrates to some extent the huge potential capability of DRIE to fabricate sub-THz frequency waveguide devices. A micromachined waveguide filter based on ultralow-loss silicon waveguide technology has been presented recently by Campion et al [16] with an average IL in the passband of only 0.5 dB for a designed fractional bandwidth of 5.2%, and Q u of a single cavity resonator is expected to reach 1600, but the fabricated filter had a center frequency shift by 4.75 GHz and a bandwidth increase by 61.5% due to fabrication inaccuracies.…”

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confidence: 99%

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Silicon Micromachined D-Band Diplexer Using Releasable Filling Structure Technique

Zhao

Glubokov

Campion

et al. 2020

IEEE Trans. Microwave Theory Techn.

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A D-band waveguide diplexer, implemented by silicon micromachining using releasable filling structure (RFS) technique to obtain high-precision geometries, is presented here for the first time. Prototype devices using this RFS technique are compared with devices using the conventional microfabrication process. The RFS technique allows etching large waveguide structures with nearly 90 • sidewall angles for the 400-µm-tall waveguides. The diplexer consists of two direct-coupled cavity six-pole bandpass filters, with the lower and the upper band at 130-134 and 141-148.5 GHz, respectively. The measured insertion loss of the two bands is 1.2 and 0.8 dB, respectively, and the measured return loss is 20 and 18 dB, respectively, across 85% of the passbands. The worst case adjacent channel rejection is better than 59 dB. The unloaded quality factors of a single cavity resonator are estimated from the measurements to reach 1400. Furthermore, for the RFS-based micromachined diplexer, an excellent agreement between measured and simulated data was observed, with a center frequency shift of only 0.8% and a bandwidth deviation of only 8%. In contrast to that, for the conventionally micromachined diplexer of this high complexity, the filter poles are not well controllable, resulting in a large center frequency shift of 3.5%, a huge bandwidth expanding of over 60%, a poor return loss of 6 and 10 dB for the lower and the upper band, respectively, and an adjacent channel rejection of only 22 dB.

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Section: Effects Of Fabrication Tolerances On Filter Performancementioning

confidence: 99%

mentioning

confidence: 99%

Silicon Micromachined D-Band Diplexer Using Releasable Filling Structure Technique

Zhao

Glubokov

Campion

et al. 2020

IEEE Trans. Microwave Theory Techn.

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“…Return loss at both ports is very similar and is 5 dB or greater across the band. Given that the insertion loss of the micromachined waveguide at D-band is between 0.008 -0.016 dB/mm [61], its contribution to the total insertion loss is negligible. The 300 µm long microstrip feed line has a measured insertion loss of 2 -3 dB/mm, while the CPW probe pads add an additional 0.2 dB loss.…”

Section: Rf Characterizationmentioning

confidence: 99%

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Campion

Zirath

et al. 2019

IEEE Trans. THz Sci. Technol.

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“…The conventional solution to characterize sub-THz devices, or to utilize them in systems with internal flange connections, is to manufacture them in a CNC-milled split-block configuration [9,10], or to mount micromachined devices in CNC-milled test fixtures [3,[11][12][13]. Such CNC-milled parts can be costly and difficult to fabricate, and significantly add to the overall losses of the system due to inferior manufacturing tolerances and the long waveguide sections required [3].…”

Section: Introductionmentioning

confidence: 99%

Micromachined Waveguide Interposer for the Characterization of Multi-port Sub-THz Devices

Gomez-Torrent

Oberhammer

2020

J Infrared Milli Terahz Waves

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This paper reports for the first time on a micromachined interposer platform for characterizing highly miniaturized multi-port sub-THz waveguide components. The reduced size of such devices does often not allow to connect them to conventional waveguide flanges. We demonstrate the micromachined interposer concept by characterizing a miniaturized, three-port, 220-330-GHz turnstile orthomode transducer. The interposer contains low-loss micromachined waveguides for routing the ports of the device under test to standard waveguide flanges and integrated micromachined matched loads for terminating the unused ports. In addition to the interposer, the measurement setup consists of a micromachined square-to-rectangular waveguide transition. These two devices enable the characterization of such a complex microwave component in four different configurations with a standard two-port measurement setup. In addition, the design of the interposer allows for independent characterization of its sub-components and, thus, for accurate de-embedding from the measured data, as demonstrated in this paper. The measurement setup can be custom-designed for each silicon micromachined device under test and co-fabricated in the same wafer due to the batch nature of this process. The solution presented here avoids the need of CNC-milled test-fixtures or waveguide pieces that deteriorate the performance of the device under test and reduce the measurement accuracy.

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An Ultra Low-Loss Silicon-Micromachined Waveguide Filter for D-Band Telecommunication Applications

Cited by 26 publications

References 10 publications

Silicon Micromachined D-Band Diplexer Using Releasable Filling Structure Technique

Silicon Micromachined D-Band Diplexer Using Releasable Filling Structure Technique

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Micromachined Waveguide Interposer for the Characterization of Multi-port Sub-THz Devices

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