An ultra-small RFID chip: μ-chip

Usami, M.

doi:10.1109/apasic.2004.1349387

Cited by 16 publications

(9 citation statements)

References 5 publications

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“…As presented in (Usami, 2004) it is also feasible to integrate embedded on-chip antennas. Unfortunately, on-chip antennas imply high losses, which limit their use to short range applications.…”

Section: Passive Transponder Architecturementioning

confidence: 99%

Design of passive backscattering RFID devices

Seemann

Huemer

2005

Elektrotech. Inftech.

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The endeavors in realizing ubiquitous chips for ambient intelligence networks increased significantly over the past few years. In particular, the passive radio frequency identification (RFID) technology became a well known synonym for passive transponder devices. The increased attention is not only related to economical advantages, but also to the general technological potential. This article deals with the design of self-sustaining wireless transponders based on the backscattering technology. We explain the general architecture, present important design constraints and emphasize general characteristics of the backscattering radio-frequency (RF) front-end approach. Furthermore, we extend the common linear models by some important nonlinear figures of merit.

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Section: Passive Transponder Architecturementioning

confidence: 99%

Design of passive backscattering RFID devices

Seemann

Huemer

2005

Elektrotech. Inftech.

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“…To improve radiation efficiency and load matching, RFID chips to-date preferably exploit off-chip antennas which are much larger than the associated ICs, increasing overall system size to millimeter-or centimeter-scale [10], [11]. In this work, we seek to bring the size of our radio transmitter down to the hundreds-of-microns size scale.…”

Section: Carrier Frequency Optimizationmentioning

confidence: 99%

Matching the Power, Voltage, and Size of Biological Systems: A nW-Scale, 0.023-${\rm mm}^{3}$ Pulsed 33-GHz Radio Transmitter Operating From a 5 kT/q-Supply Voltage

Choi

Aklimi

Shi

et al. 2015

IEEE Trans. Circuits Syst. I

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This paper explores the extent to which a solid-state transmitter can be miniaturized, while still using RF for wireless information transfer and working with power densities and operating voltages comparable to what could be harvested from a living system. A 3.1 nJ/bit pulsed millimeter-wave transmitter, 300 by 300 by 250 in size, designed in 32-nm SOI CMOS, operates on an electric potential of 130 mV and 3.1 nW of dc power. Farfield data transmission at 33 GHz is achieved by supply-switching an LC-oscillator with a duty cycle of . The time interval between pulses carries information on the amount of power harvested by the radio, supporting a data rate of 1 bps. The inductor of the oscillator also acts as an electrically small on-chip antenna, which, combined with millimeter-wave operation, enables the extremely small form factor.Index Terms-Antennas, low power design, monolithic integrated circuits, radio frequency oscillators. 1549-8328

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“…It usually consists of capacitors and pn diodes (PND's) or Schottky-barrier diodes (SBD's). Modern RF applications such as RF-ID chips often use Schottky-barrier diode (SBD) in this circuit [2][3][4]. Unfortunately, generally speaking, the reverse-biased current (I R ) of an SBD is not significantly lower than the forward-biased current (I F ) because the requirement for high drive currents results in a low barrier height.…”

Section: Introductionmentioning

confidence: 99%

“…Since RF-ID chips have no internal power supply, they need a way of using the received signal as an energy source; a common approach is the Schenkel circuit [1,2]. The basic Schenkel circuit is shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

Ōmura¹,

Iida²

2013

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The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.

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An ultra-small RFID chip: μ-chip

Cited by 16 publications

References 5 publications

Design of passive backscattering RFID devices

Design of passive backscattering RFID devices

Matching the Power, Voltage, and Size of Biological Systems: A nW-Scale, 0.023-${\rm mm}^{3}$ Pulsed 33-GHz Radio Transmitter Operating From a 5 kT/q-Supply Voltage

Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

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