An ultra‐thin oxide sub‐1 V CMOS bandgap voltage reference

Bohannon, Eric; Washburn, C.; Mukund, P.R.

doi:10.1002/cta.1892

Cited by 3 publications

(3 citation statements)

References 17 publications

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“…During the last years, the research of mobile device has been widely used, and the growing demand for low power is pushed by the fact that the majority of recently proposed systems are battery-operated [1]. Bandgap reference voltage circuit is necessary for high precision processing systems, such as voltage regulators, analog to digital converters, digital to analog converters [2]. Aggressive technology scaling coupled with scaled power supply units is reduced area on the expense of lower dynamic range.…”

Section: Introductionmentioning

confidence: 99%

A Low Power Bandgap Voltage Reference with Nonlinear Voltage Curvature Compensation

Jin¹,

Li²,

Li³

et al. 2017

dtetr

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The reference voltage source is the main part both in the analog and mixed-signal integrated circuits. A good reference voltage source can provide a stable voltage for the circuit, so that the system can work stable accurately. This paper describes a low power bandgap voltage reference with second order compensated, which utilizes a Kujik bandgap reference as the first order curvature correction and adding second order non-linear voltage compensation. The presented circuit is implemented in a 0.18μm CMOS technology, and the voltage supply (VDD) is 1.8V. Piecewise curvature compensation is employed to reduce the temperature coefficient of the bandgap reference from 465ppm/°C to 5.5ppm/°C, with a temperature range -45~85°C. The circuit works under the condition of 27 °C, the output of the reference voltage is 1.207 V. The total current consumption of the whole bandgap is 11.69μA, the total area of the layout is 0.10132mm 2 and the power supply rejection ratio is -63dB.

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Section: Introductionmentioning

confidence: 99%

A Low Power Bandgap Voltage Reference with Nonlinear Voltage Curvature Compensation

Jin¹,

Li²,

Li³

et al. 2017

dtetr

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“…Conventional voltage reference designs use the temperature dependence of the bipolar transistor's pn junction to create a proportional to absolute temperature (PTAT) voltage, which is used to provide a first‐order temperature‐compensated reference. These designs are limited by the base‐emitter non‐linearities at a TC of around 20 ppm/°C, over a temperature range of 100°C.…”

Section: Introductionmentioning

confidence: 99%

A 0.7 V, 2.7 μW, 12.9 ppm/° C over 180° C CMOS subthreshold voltage reference

Andreou

Georgiou

2016

Circuit Theory & Apps

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Summary An all‐CMOS, low‐power, wide‐temperature‐range, curvature‐compensated voltage reference is presented. The proposed topology achieves a measured temperature coefficient of 12.9 ppm/°C for a wide temperature range of 180°C ( − 60 to 120°C) at a bias voltage of 0.7 V while consuming a mere 2.7 μW. The high‐order curvature compensation, which leads to a low‐temperature sensitivity of the reference voltage, is performed using a new, simple, but efficient methodology. The non‐linearities of an N‐type metal‐oxide‐semiconductor (NMOS) device operated in subthreshold are combined with the non‐linearities of two different kinds of polysilicon resistors, leading to the improved performance. The extended temperature range of this voltage reference gives it an important competitive advantage, especially at lower temperatures, where prior art designs' performance deteriorate abruptly. In addition, it utilizes an innovative trimming methodology whereby two trimmable resistors enable the tuning of both the overall slope and non‐linearities of the temperature sensitivity. The design was fabricated using TowerJazz Semiconductor's CMOS 0.18 μm technology, without using diodes or any external components such as compensating capacitors. It has an area of 0.023 mm2 and is suitable for high‐performance power‐aware applications as well as applications operating in extreme temperatures. Copyright © 2016 John Wiley & Sons, Ltd.

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“…Traditional reference circuit topologies utilize the linear combination of a base-emitter voltage and a thermal voltage in order to generate a stable reference voltage, across temperature [1][2][3][4][5]. The accuracy of this method is limited by the non-linearities of the bipolar junction transistor.…”

Section: Introductionmentioning

confidence: 99%

A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range, voltage reference

Andreou

Georgiou

2015

Circuit Theory & Apps

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A low-voltage, low-power, low-area, wide-temperature-range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide temperature range of 190°C (À60 to 130°C) while consuming only 4 μW at 0.75 V. It performs a high-order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade-off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18-μm standard CMOS technology and occupies an area of 0.039 mm 2 . The proposed reference circuit is suitable for high-precision, lowenergy-budget applications, such as mobile systems, wearable electronics, and energy harvesting systems.

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An ultra‐thin oxide sub‐1 V CMOS bandgap voltage reference

Cited by 3 publications

References 17 publications

A Low Power Bandgap Voltage Reference with Nonlinear Voltage Curvature Compensation

A Low Power Bandgap Voltage Reference with Nonlinear Voltage Curvature Compensation

A 0.7 V, 2.7 μW, 12.9 ppm/° C over 180° C CMOS subthreshold voltage reference

A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range, voltage reference

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