An ultralow on-resistance high-voltage SOI p-channel LDMOS

Deng, Gaoqiang; Wei, Jie; Liu, Jianping; Luo, Xiaorong

doi:10.1016/j.spmi.2016.10.061

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…However, the R on,sp of these methods is strongly dependent upon the N d , and charge imbalance will result in BV degradation. In the on-state, accumulation-mode current transportation is an efficient concept to achieve lower R on,sp and diminish its dependence on N d by forming high density electron accumulation layer [22][23][24][25]. For the previous accumulation LDMOS in [24,25], the electron accumulation layer in the on-state is discontinuous and the N-drift length (L D ) is not fully used to sustain the off-state BV.…”

Section: Introductionmentioning

confidence: 99%

Simulation and experimental study on a high figure of merit LDMOS with ingenious layout design

Wei¹,

Dai²,

Ma³

et al. 2022

Semicond. Sci. Technol.

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To improve the tradeoff relationship between the specific on-resistance (Ron,sp) and breakdown voltage (BV), a novel lateral double-diffusion metal-oxide-semiconductor field effect transistor (LDMOSFET) with ingenious layout design is proposed and investigated by simulations and experiments. The proposed LDMOS features a specific convex-shape field plate (CFP) structure at source side and two separated integrated diodes (SID) at the drain side. On one hand, a continuous electron accumulation layer is formed from source to drain in the on-state, providing an ultralow current path to decrease the specific on-resistance (Ron,sp). On the other hand, the CFP and SID structures allow the proposed device to make full use of the drift length to sustain the off-state voltage, so that the novel device could maintain the same BV level with a shorten drift length. Thus, the proposed CFP-SID LDMOS achieves a much lower Ron,sp and better Ron,sp-BV tradeoff relationship. The experimental results illustrate that the CFP-SID LDMOS realizes a BV of 518V and Ron,sp of 23.5 mΩ·cm2 with a high figure of merit (FOM) of 11.42MW/cm2. Compared with the triple-RESURF LDMOS under the same BV, the proposed device decreases the Ron,sp by 53.8%.

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