n-Si
is a narrow band gap semiconductor that has been demonstrated
as an excellent photoabsorber material for photoelectrochemical (PEC)
water splitting. Depositing a thin layer of Ni film on n-Si can form
a Schottky junction at the interface, which offers a simple and useful
route toward light-driven water oxidation. However, the relatively
low catalytic activity of the Ni layer and the presence of interface
states limit the application of this structure. Herein, we prepared
a high-performance NiFe nanoparticle decorated Si photoanode for efficient
solar-driven water oxidation to O2. NiFe nanoparticles
were dispersed on a Si substrate surface homogeneously to form an
inhomogeneous metal–insulator–semiconductor (MIS) junction,
which increased the photovoltage of the photoanode. In addition, the
oxide/oxyhydroxide layer on the deposited NiFe layer formed during
the evaporation deposition acted as a highly efficient electrocatalyst,
which also contributed to the high PEC performance of the photoanode.
The photoanode covered with a 2 nm NiFe film exhibited the best PEC
performance with a low onset potential of 1.09 V versus reversible
hydrogen electrode (RHE) (the potential required to reach the photocurrent
of 1 mA/cm2), a high photocurrent of 25.2 mA/cm2 at 1.23 V versus RHE, and a stable output over 50 h under AM 1.5G
illumination due to the high-performance inhomogeneous MIS junction
and a thick oxide/oxyhydroxide catalytic shell formed on the NiFe
nanoparticle via an aging process.