Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs

Chen, Bo‐Yuan; Chen, Kun-Ming; Chiu, Chia-Sung; Huang, Guo–Wei; Chen, Hsiu-Chih; Chen, Chun‐Chi; Hsueh, Fu-Kuo; Chang, Edward Yi

doi:10.1109/ted.2018.2863748

Cited by 18 publications

(7 citation statements)

References 19 publications

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“…The light-induced reduction in C gs can be ascribed to the decrease of drain resistance, as observed in silicon power MOSFETs. 28 Because the change of total gate capacitance is minor, the enhancements of f T and f max with illumination are dominated by the increase of g m . On the other hand, for the MIS-HEMT, its C gs increases apparently with the presence of UV light [see Fig.…”

Section: Analysis Of Small-signal Model Parametersmentioning

confidence: 99%

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Chen

Lin

Nagarajan

et al. 2021

ECS J. Solid State Sci. Technol.

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The high-frequency characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs) are investigated under ultraviolet (UV) radiation with 365 nm wavelength. When HEMTs and MIS-HEMTs are illuminated with an UV source, their drain currents increase apparently owing to the generated photocurrent. Nevertheless, they show different high-frequency response to the UV light. For HEMTs, the peak cutoff frequency (fT) and maximum oscillation frequency (fmax) of illuminated devices are 20% and 10% higher than those in dark condition, respectively, owing to the increased transconductance. For MIS-HEMTs, however, their high-frequency performances are degraded when transistors are subject to light exposure. The degradations of peak fT and fmax are around 3.7% and 18%, respectively. The small-signal model parameters relevant to the high-frequency characteristics were extracted to explain these phenomena. Additional trapped charges in the SiN gate dielectric induced by UV light would be responsible for the degraded high-frequency parameters in illuminated MIS-HEMTs. These experimental results are important for designing a suitable GaN-based HEMT for optoelectronic applications.

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Section: Analysis Of Small-signal Model Parametersmentioning

confidence: 99%

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Chen

Lin

Nagarajan

et al. 2021

ECS J. Solid State Sci. Technol.

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“…The cut-off frequency (f T ) and the maximum oscillation frequency (f MAX ) are the essential figures of merit in RF performance evaluation, and they are expressed as [14,31]:…”

Section: Enhancement Of Rf Characteristicsmentioning

confidence: 99%

“…To evaluate the DC/RF performance objectively, the DF-DeFF are compared and analyzed with the latest similar devices, Hybrid FinFET [14], STI LDMOS [15], and HyPowerFF [16] as shown in figure 11. Table 2 shows the V BD and RF figures of merit of the four devices.…”

Section: Comparison To the Latest Devicesmentioning

confidence: 99%

“…In order to overcome this trade-off, DE structures with high-k field plate (FP) [13], fin/planar hybrid [14], and shallow trench isolation laterally diffused MOSFET (STI LDMOS) [15] have been suggested. Without DE structure, Hybrid workfunction and oxide thickness Low-Power FinFET (HyPowerFF) has also been reported [16].…”

Section: Introductionmentioning

confidence: 99%

“…The structure, namely dual material gate (DMG) and high-k field plate-DeFinFET (DF-DeFF), utilizes a DMG and a high-k FP, and they are effectively combined into the DeFinFET. In the following, the device performance will be verified by comparing the figures of merit in DC and RF performances of DF-DeFF with the Conventional-DeFinFET (C-DeFF) and the recently proposed devices, such as Hybrid FinFET [14], STI LDMOS [15], and HyPowerFF [16].…”

Section: Introductionmentioning

confidence: 99%

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A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications

Kim

Park

et al. 2022

Semicond. Sci. Technol.

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A drain-extended (DE) FinFET with a dual material gate (DMG) and a high-k field plate (FP), named DF-DeFF, is proposed for high-voltage RF applications. The FP induces the charge variation in the drain extension, which appears as either the extended depletion in the gate-off state or the electron accumulation in the gate-on state. Along with the FP, the DMG forms a step-like potential variation along the channel, which leads to electron acceleration and the screening effect on the drain-to-source voltage (VDS). These effects give significant advantages to the DC characteristics, including breakdown voltage (VBD) and on-resistance (Ron), and the RF characteristics, including transconductance (gm) and output-resistance (ro). Compared to the latest high-voltage RF FinFETs, the DF-DeFF shows a drastic improvement in the major performance indicators such as VBD, cut-off frequency (fT), and maximum oscillation frequency (fMAX). These results indicate that DF-DeFF is a FinFET with sufficient competitiveness even in high voltage circumstances.

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Modeling and Performance Analysis of n-FinFETs: A Comparative Study

Jena

Dash

Mohapatra

et al. 2020

Advances in Electrical Control and Signal Systems

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Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs

Cited by 18 publications

References 19 publications

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications

Modeling and Performance Analysis of n-FinFETs: A Comparative Study

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