Analysis and optimization of less power 12 T SRAM bit cell based on FinFET in 32 nm technology

Chakraborty, Arijit; Tomar, Ranjeet Singh; Sharma, Mayank

doi:10.1016/j.matpr.2023.01.261

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…This allows for effective power allocation that is adapted to workload needs. Additionally, FinFET is especially wellsuited for low-power applications because of its built-in leakage power reduction techniques [154], [155]. The gateall-around design of GAAFETs provides unmatched scalability and gate control, opening the way to voltage scaling and adaptive body biassing.…”

Section: Low Leakage Currents Operational Voltage and Dynamic Powermentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

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Section: Low Leakage Currents Operational Voltage and Dynamic Powermentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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A Low Power Feedback Cutting 8T SRAM Cell for Improved Stability

Kumar

Lorenzo

Prajvalitha

et al. 2023

2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT)

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Single-Ended Near Threshold 9T SRAM for Portable Low-Power Biomedical Applications

Kumar,

Lorenzo

2024

J CIRCUIT SYST COMP

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Biomedical applications like body area networks (BAN) necessitate the construction of power optimized SRAMs to enhance the batteries life at BAN nodes. In this work, we have designed a one-sided near-threshold 9TSRAM for low-power portable biomedical applications. The proposed near threshold 9T SRAM (PNT9T SRAM) employs a cross-connected Schmitt trigger (ST) inverter and normal inverter in its cell core. A separate path for reading is also employed to eliminate the reading disturbance. The write disturbance is removed in the PNT9T SRAM by removing the trail from VDD and ground. The write ability is improved with the use of a feedback-cutting approach. The leakage power dissipation of the memory is mitigated by using a tail transistor, virtual ground (VGND). To evaluate the performance, the PNT9T SRAM is compared with conventional 6T (C6T), ST11T, ST9T, TG9T, SBL9T, and SE9T SRAM cells using FinFET 18[Formula: see text]nm technology at 0.6[Formula: see text]V power supply. The PNT9T SRAM mitigates the read power, write power, and leakage power by 51.10%, 50.57%, and 78.97%. Furthermore, the read and write static noise margins were improved by 54% and 39.5%, respectively, compared to C6T SRAM.

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Analysis and optimization of less power 12 T SRAM bit cell based on FinFET in 32 nm technology

Cited by 4 publications

References 5 publications

FinFET to GAA MBCFET: A Review and Insights

FinFET to GAA MBCFET: A Review and Insights

A Low Power Feedback Cutting 8T SRAM Cell for Improved Stability

Single-Ended Near Threshold 9T SRAM for Portable Low-Power Biomedical Applications

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