Analysis and simulation of a mid-infrared p/sup +/-InAs/sub 0_55/Sb/sub o_15/P/sub 0_30//n/sup 0/-InAs/sub 0_89/Sb/sub 0_11//N/sup +/-InAs/sub 0_55/Sb/sub 0_15/P/sub 0_3-/ double heterojunction photodetector grown by LPE

Bilayer graphene/HgCdTe based very long infrared photodetector with superior external quantum efficiency, responsivity, and detectivity

“…where CM represents the hot carrier multiplication factor [69][70][71][72][73][74] which is a function of bias voltage and ambient temperature, c is the speed of light, J l is the photocurrent density, and l represents the wavelength of the incident radiation. The net QE ext of the photodetector comprises of neutral p + -(QE ext ) p + , neutral n-(QE ext ) n , and the depletion (QE ext ) dep regions, and can be written as: 24,[90][91][92] QE ext ¼ CM(V,T) Â ((QE ext ) p + + (QE ext ) n + (QE ext ) dep ) (22) where…”

Analytical and numerical evaluation of electron-injection detector optimized for SWIR photon detection

“…To derive the dark current, we use a similar approach as in Ref. 16. The steady-state continuity equations governing the distribution of minority carriers in the GaAsSb are given by…”

Computer modeling of MWIR single heterojunction photodetector based on mercury cadmium telluride

“…These components arise from the contribution of the three regions, e.g., neutral n-region where a(k) is the optical absorption coefficient of the material which is a function of wavelength k, R is the Fresnel reflection coefficient at the entrance, P opt is the incident optical power, m is the frequency of radiation and A is the device area. The quantum efficiency components can be obtained as [25,26] where L p and L n are the hole and electron diffusion lengths in n-and p-regions, respectively. c n = S n L n /D n and c p = S p L p /D p are the ratio of surface to bulk recombination velocity in n-and p-regions, respectively.…”