Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals

Abstract

Grazing incidence small-angle X-ray scattering (GISAXS) was applied in the study of semiconductor nanocrystals embedded in a light matrix. The appropriate mathematical apparatus was developed, so that a full characterization of 3D ensemble of nanoparticles, formed in the implanted layer, can be obtained from GISAXS spectra recorded on twodimensional (2D) detector.The investigated CdS nanocrystals in SiO 2 substrate were formed by ion beam synthesis and subsequent annealing at 1273 K. From the fits to the theoretical expressions, the average particle diameter, the shape, as well as the size distribution were determined. The obtained results are in good agreement with TEM results performed on the analogous samples. r

Structure of PbTe(SiO2)/SiO2multilayers deposited on Si(111)

“…Several techniques, such as transmission electron microscopy (TEM), optical absorption, atomic force microscopy, X-ray diffraction (XRD) and small-angle X-ray scattering (SAXS), have been applied to establish the structure of composites consisting of semiconductor nanoparticles embedded in dielectric matrices. The SAXS technique at grazing incidence (GISAXS) has been used to characterize metallic (d' Acapito et al, 2004;Cohen & Chung, 1991) and semiconductor (Desnica et al, 2004;Buljan et al, 2003) nanoparticles embedded in thin films deposited on the surfaces of flat substrates. By appropriate choices of the grazing-incidence angle and photon energy of the primary X-ray beam, this technique can probe selected slices close to the external surface of the sample, with small thicknesses (typically from 5 nm up to a few hundreds of nanometres).…”

Design and implementation of a simple and inexpensive GISAXS sample chamber

“…When dealing with the study of thin films and surfaces where enhanced surface sensitivity is necessary, more specialized techniques employing grazing-incidence geometry are required (Dosch, 1992). Grazing-incidence small-angle X-ray scattering (GISAXS) has received growing attention in recent years and is currently recognized as an ideal tool for the study of structure and morphology of thin films and interfaces (Buljan et al, 2003;Naudon et al, 2000). GISAXS has been applied to a wide range of materials including hard and soft condensed matter, quantum dot systems, biological membranes, two-dimensional protein crystals, and block copolymer films (Lee et al, 2005).…”