Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Abstract

Abstract:A set of MOS structures with thin SiO 2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U − V G curves). By comparing the A-DLTS spectra, U − V G characteristics and some electrical measurements (G − V , I − V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

Investigation of the relationships between acoustic attenuation and ionic conduction of metaphosphate glasses

“…As it has been demonstrated previously, acoustic waves are suitable not only for the investigation of materials directly related to acoustics, but also to study the properties of semiconductor structures [7] and glasses [8][9][10][11][12]. In the particular case of lithium and copper bearing phosphate glasses, the authors showed previously that there seems to be a close correlation between the activation energy for the ionic conduction and the activation energy of the acoustic relaxation process below the glass transition temperature [8][9].…”

Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy

“…28 P-Si MOS structures were fabricated on boron-doped p-type Si(100) wafers with 10-15 X cm resistivity. After RCA cleaning of the Si wafers and the removal of a native oxide layer, a thin oxide layer was formed by immersing the Si wafers in 70% HNO 3 aqueous solutions at 120 C. 29 After rinsing with ultrapure water, the wafers were divided to several parts and some parts were treated by postoxidation annealing (POA) in nitrogen performed for 1 h at 250 C (n MOS) or 700 C for 20 min (p MOS). Then, aluminum (Al) dots of 0.15 and 0.30 mm diameter were formed on all parts of prepared wafers, resulting in hAl/SiO 2 /Sii MOS diodes.…”

3D device‐level simulation of charge separation from sidewall in vertical transfer gate pinned photodiode pixels for noise mitigation

“…It should be mentioned that in simulations, the traps energy level, density, and distribution in the interface (D it ) are defined according to [22][23][24][25].…”