Analysis of a Novel Electrically Programmable Active Fuse for Advanced CMOS SOI One-Time Programmable Memory Applications

Hoefler, A.; Henson, Chad; Li, Chi-nan; Lin, Der-Gao

doi:10.1109/essder.2006.307680

Cited by 8 publications

(4 citation statements)

References 5 publications

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“…On the other hand, in the hard-programmed state, the values of I sweep are smaller and more stable. The two similar resistance groups also seem to appear in p-fuses programmed with moderate pulsed currents [9], [10].…”

Section: B Observations Of Cpmentioning

confidence: 84%

Systematic Study of the Dopant-Dependent Properties of Electrically Programmable Fuses With Silicided Poly-Si Links Through a Series of $I$– $V$ Measurements

Suto

Mori

Kanno

et al. 2007

IEEE Trans. Device Mater. Relib.

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Electrically programmable/writable fuses (e-fuses) with a Ni-silicided polycrystalline silicon narrow link and fabricated with four doping conditions were studied using two successive I-V measurements. The initial I-V sweeps can change e-fuses into targeted programmed states and display all of the programming processes where the currents change by many orders of magnitude. The second set of I-V curves can show stability and conduction in the programmed states for both bias polarities. Through the series of I-V measurements, the two-step programming with moderate blowing conditions could be reproduced and studied systematically. The programming processes of incompletely programmed states, before complete programming (CP), were found to be strongly dependent on the dopant conditions. The origin of the dopant dependency was considered within a simple electrical equivalent circuit model. At least two or three programmed states were identified among the completely programmed states in terms of the characteristic spreads of the final resistance and conduction behavior. The most distinctive currents after CP are similar to those in varistors. The stability of every programmed state is strongly dependent on the dopant conditions. Index Terms-Dopant, double Schottky barrier, electrically programmable fuse, electrically programmable/writable fuses (e-fuse), electromigration (EM), I-V measurement, nickel silicide, programming, transmission line model, varistor.

show abstract

Section: B Observations Of Cpmentioning

confidence: 84%

Systematic Study of the Dopant-Dependent Properties of Electrically Programmable Fuses With Silicided Poly-Si Links Through a Series of $I$– $V$ Measurements

Suto

Mori

Kanno

et al. 2007

IEEE Trans. Device Mater. Relib.

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“…Therefore, four minimum size pmos transistors can be used as the power transistors. Then, an electrical fuse can be programmed with the configuration to turn on one of the pmos transistors [4]. In terms of area, the four minimum sized pmos transistors would be 0.12 µm 2 .…”

Section: Area Overheadmentioning

confidence: 99%

“…We measured the energy for each bitline using (4). Each column's bitline was pre-charged to 1 V. We then determined the amount of development for each SRAM instance in a particular column.…”

Section: Experiments a Setupmentioning

confidence: 99%

Adaptive SRAM memory for low power and high yield

Mohammad

Bijansky

Aziz

et al. 2008

2008 IEEE International Conference on Computer Design

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Abstract-SRAMs typically represent half of the area and more than half of the transistors on a chip today. Variability increases as feature size decreases, and the impact of variability is especially pronounced on SRAMs since they make extensive use of minimum sized devices. Variability leads to a large amount of guard banding in the design phase in order to meet frequency and yield targets. We develop an SRAM architecture that eliminates guard banding. Specifically, our SRAM uses multiple supply voltages that are assigned post-manufacturing. We compensate for variation by powering up manufactured devices that are slower than designed. Specifically, we assign supply voltages to 6T cells on a per-column basis; this gives us sufficiently fine-grained control over devices without excessive area overhead. We show that post-manufacturing voltage assignment results in a 28% reduction in bitline energy compared to a fixed voltage design for the same yield using data from a real-world 45 nm process.

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“…It allows more traces of poly and back-end-of-line (BEoL) metal layers overpassing above the fuse area to acquire a high pattern compactness that is comparable to conventional polysilicon fuse and BEoL metal fuse structures. The active fuse has been implemented in an SOI process in a previous study; 4 however, its result is insufficient to meet the reliable requirement for the current product applications. For cost concerns, the active fuse has less process procedures than that of the polysilicon counterpart, in which a mechanical memorize layer is used to boost its programming ability.…”

mentioning

confidence: 99%

Communication—Diffusion Break-Assisted Programming Mode for Active Electrically Programmable Fuse

Wong

Chang²,

Tseng

et al. 2018

ECS J. Solid State Sci. Technol.

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The fabrication of an active electrically programmable fuse (eFuse) on a silicon-on-insulator (SOI) substrate fully compatible with the current complementary metal-oxide-semiconductor technology is reported. The SOI structure inherently provides an isolation environment for an active eFuse. N-and P-type active fuses are programmed at room temperature and at 125 • C. After programming, the P-type active fuse shows better programming performance than the N-type at both temperatures. The remaining cobalt in the fuse link decreases the programming performance of the N-type active fuse. The formation of diffusion break after programming assists the performance of the P-type active fuse.

show abstract

Analysis of a Novel Electrically Programmable Active Fuse for Advanced CMOS SOI One-Time Programmable Memory Applications

Cited by 8 publications

References 5 publications

Systematic Study of the Dopant-Dependent Properties of Electrically Programmable Fuses With Silicided Poly-Si Links Through a Series of $I$– $V$ Measurements

Systematic Study of the Dopant-Dependent Properties of Electrically Programmable Fuses With Silicided Poly-Si Links Through a Series of $I$– $V$ Measurements

Adaptive SRAM memory for low power and high yield

Communication—Diffusion Break-Assisted Programming Mode for Active Electrically Programmable Fuse

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