Analysis of double-gate thin-film transistor

Farrah, H.; Steinberg, R. F.

doi:10.1109/t-ed.1967.15901

Cited by 26 publications

(13 citation statements)

References 3 publications

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“…To test our approach and to measure the self-forces in a real device simulation, we have chosen a double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) structure [19,20] because of its high symmetry and also because this multigate transistor architecture is expected to replace the conventional bulk MOSFET beyond 22 nm technology generation [21]. We know that in the centre of the symmetric structure of the DG MOSFET the effect of the boundaries should compensate one another.…”

Section: Numerical Resultsmentioning

confidence: 99%

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Aldegunde

Seoane

García‐Loureiro

et al. 2010

Computer Physics Communications

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Section: Numerical Resultsmentioning

confidence: 99%

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Aldegunde

Seoane

García‐Loureiro

et al. 2010

Computer Physics Communications

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“…However, since the supply voltage has not been downscaled as smaller feature sizes have been achieved, the power densities have increased close to the limit of 150 W·cm −2 beyond which air cannot cool the device temperature [ 1 ]. The move to a 3D FinFET architecture has given some respite [ 2 , 3 ]. Electronic devices at nanometre scales have already been fabricated and tested [ 4 , 5 , 6 , 7 ]: effective gate lengths of some of the recently produced transistors are well under 20 nm [ 8 ].…”

Section: Introductionmentioning

confidence: 99%

Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation

Martı́nez

Barker

2020

Materials

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A review and perspective is presented of the classical, semiclassical and fully quantum routes to the simulation of electrothermal phenomena in ultrascaled silicon nanowire fieldeffect transistors. It is shown that the physics of ultrascaled devices requires at least a coupled electron quantum transport semiclassical heat equation model outlined here. The importance of the local density of states (LDOS) is discussed from classical to fully quantum versions. It is shown that the minimal quantum approach requires selfconsistency with the Poisson equation and that the electronic LDOS must be determined within at least the selfconsistent Born approximation. To bring in this description and to provide the energy resolved local carrier distributions it is necessary to adopt the nonequilibrium Green function (NEGF) formalism, briefly surveyed here. The NEGF approach describes quantum coherent and dissipative transport, Pauli exclusion and nonequilibrium conditions inside the device. There are two extremes of NEGF used in the community. The most fundamental is based on coupled equations for the Green functions electrons and phonons that are computed at the atomically resolved level within the nanowire channel and into the surrounding device structure using a tight binding Hamiltonian. It has the advantage of treating both the nonequilibrium heat flow within the electron and phonon systems even when the phonon energy distributions are not described by a temperature model. The disadvantage is the grand challenge level of computational complexity. The second approach, that we focus on here, is more useful for fast multiple simulations of devices important for TCAD (Technology Computer Aided Design). It retains the fundamental quantum transport model for the electrons but subsumes the description of the energy distribution of the local phonon subsystem statistics into a semiclassical Fourier heat equation that is sourced by the local heat dissipation from the electron system. It is shown that this selfconsistent approach retains the salient features of the fullscale approach. For focus, we outline our electrothermal simulations for a typical narrow Si nanowire gate allaround fieldeffect transistor. The selfconsistent Born approximation is used to describe electronphonon scattering as the source of heat dissipation to the lattice. We calculated the effect of the device selfheating on the current voltage characteristics. Our fast and simpler methodology closely reproduces the results of a more fundamental computeintensive calculations in which the phonon system is treated on the same footing as the electron system. We computed the local power dissipation and “local lattice temperature” profiles. We compared the selfheating using hot electron heating and the Joule heating, i.e., assuming the electron system was in local equilibrium with the potential. Our simulations show that at low bias the source region of the device has a tendency to cool down for the case of the hot electron heating but not for the case of Joule heating. Our methodology opens the possibility of studying thermoelectricity at nanoscales in an accurate and computationally efficient way. At nanoscales, coherence and hot electrons play a major role. It was found that the overall behaviour of the electron system is dominated by the local density of states and the scattering rate. Electrons leaving the simulated drain region were found to be far from equilibrium.

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“…Theoretical analysis of double‐gate (DG) transistors dates back to 1967 1, about the same time as bulk metal–oxide– semiconductor field‐effect transistor (MOSFET) models. Since the 1980s, many alternatives to the conventional bulk‐silicon MOSFET have been proposed and developed, such as the silicon‐on‐insulator (SOI) and DG MOSFETs 2–6.…”

Section: Introductionmentioning

confidence: 99%

Drain current model of double-gate MOSFETs considering both electrons and holes

Zhu

Yan

et al. 2014

IEEJ Trans Elec Electron Eng

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We present a rigorously derived current solution for undoped double‐gate (DG) MOSFETs with two carriers, which is based on surface potentials. The third‐order Newton–Raphson (NR) method is used to solve the surface‐potential equations resulting from the application of the boundary conditions to the general Poisson solution, with an initial guess very close to the true solution. The results demonstrate surface‐potential solutions for DG MOSFETs with 2–7 iterations to achieve an accuracy of 10−15. The drain current model for two carriers is presented as a benchmark to test the accuracy of one‐carrier current approximation. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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Analysis of double-gate thin-film transistor

Cited by 26 publications

References 3 publications

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation

Drain current model of double-gate MOSFETs considering both electrons and holes

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