Analysis of Factors for Improving Functionality of Tin Oxide Gas Sensor

Abstract

The proposed work discusses different parameters which are considered to improve the performance of a tin oxide-based thin film gas sensor. This includes analysing and deducing suitable catalytic additives to enhance the performance of the sensor in terms of selectivity and sensitivity. Chemical sensitization and electronic sensitization are performed to improve the rate of response of the sensor.

Ethanol Sensing Properties and First Principles Study of Au Supported on Mesoporous ZnO Derived from Metal Organic Framework ZIF-8

“…While Au nanoparticles supported on the surface without using the ZIF structure as a template are prone to agglomeration due to their high surface energy, enervating catalytic performance [ 48 , 49 ]. Secondly, when introducing precious metals into semiconductor-based resistance sensing devices, the mechanisms of “electronic sensitization” and “chemical sensitization” should be considered [ 50 , 51 , 52 ]. Electron sensitization occurs because the electrons in ZnO transfer to Au when Au nanoparticles are in contact with ZnO, which expands the depletion zone of ZnO.…”

Tin Oxide Film Deposition and Characterization for a Chemoresistive Gas Sensor

“…From the undoped tin oxide film characterization results, it may be understood that a tin oxide film of thickness 470À500 nm offers a very high sensitivity towards LPG, H 2 , and methane with the operating temperature ranging from 250 to 450 C. To improve sensitivity further, a palladium-doped tin oxide gas sensing film, as discussed in [18,19], has been deposited and the results are reported in [20].…”

Selective Functionalization of High-Resolution Cu2O Nanopatterns via Galvanic Replacement for Highly Enhanced Gas Sensing Performance

“…Metal oxide semiconductors (MOSs) (e.g., n-type [1,2,3,4,5] and p-type [6,7,8,9,10,11,12]) are widely used as gas sensing materials due to their high sensitivity, large specific surface area, applicability to various gases (NO 2 , CO 2 , H 2 , volatile organic compounds (VOCs), etc. ), high electron mobility, and good chemical/thermal stability at high operating temperature [13,14,15,16,17,18,19,20].…”

“…), high electron mobility, and good chemical/thermal stability at high operating temperature [13,14,15,16,17,18,19,20]. Many approaches have been adopted to enhance the gas sensing performance of the MOS, including grain size refinement, increasing the surface area, reducing the interface area between the substrate and the device, and introduction of dopants and defects [1,18,19,20,21,22]. Doping with noble metals such as Pt [21,22], Pd [23], and Ag [2] has been widely used to enhance the sensing performance of the MOS by tuning the gas adsorption or diffusion properties.…”

“…Doping with noble metals such as Pt [21,22], Pd [23], and Ag [2] has been widely used to enhance the sensing performance of the MOS by tuning the gas adsorption or diffusion properties. As sensitizers on the MOS surface, noble metals can induce electronic or chemical sensitization pathways [1,21]. Electronic sensitization occurs due to the electronic interaction between the semiconductor and the doped metal.…”