Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack

A new strategy for multilayer stacking using charge trapping layer (CTL) is proposed and a new CTL material is synthesized, which contains a trilayer dielectric with the total thickness less than 28 nm, deposited by initiated chemical vapor deposition (iCVD) process. 2.6 nm thick poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) and 19 nm thick poly(1,4-butanediol diacrylate) (pBDDA) are employed as tunneling and blocking dielectric layers, respectively. A 6 nm thick ultrathin charge trapping layer containing hydroxyl group is inserted between the tunneling and the blocking layers for stable, long-term memory operation. For this purpose, a homogeneous copolymer of 1,4-butanediol diacrylate and 2-hydroxyethyl acrylate is newly synthesized. The fabricated memory with the trilayer dielectric shows larger than 5.8 V of memory window at low programming/erasing voltage of 16 V. The retention characteristics of the low-power organic memory device is improved significantly with the drain current decrease less than 0.40 order after 10 8 s, corresponding to one of the longest retention time periods obtained from organic NVM reported to date. The low-power organic NVM could also be integrated on flexible substrate, which is fully operational even under 2.72% of applied strain.

show abstract

Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality

Lee

Pak

Choi

et al. 2020

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

show abstract

Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film

Güllü

Yıldız

2020

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD

Kwon

Park

2022

J. Korean Phys. Soc.

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack

Cited by 5 publications

References 10 publications

Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality

Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality

Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film

Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD

Contact Info

Product

Resources

About