Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET

Buchali, Fred; Heedt, C.; Prost, W.; Gyuro, I.; Meschede, H.; Tegude, F.‐J.

doi:10.1016/0167-9317(92)90462-z

Cited by 16 publications

(3 citation statements)

References 5 publications

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“…The experiment is motivated by results from the InAlAs/InGaAs HFET literature showing that electron flow through a high-field region in the InGaAs channel will cause impact-ionization [23]- [26]. Some of the generated holes will be collected by the gate and contribute to the gate current [25]- [27]. This flow of source electrons and their generated holes has been illustrated schematically by the solid arrows in Fig.…”

Section: F Gate Electrons Not Source Electrons Are Responsible Formentioning

confidence: 99%

Physics of breakdown in InAlAs/n/sup +/-InGaAs heterostructure field-effect transistors

Bahl

Alamo

1994

IEEE Trans. Electron Devices

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Abstrucf-InAIAs/n+-InCaAs HFET's on InP have demonstrated a high breakdown voltage in spite of the narrow bandgap of the InGaAs channel. In order to understand this unique feature, we have carried out a systematic temperature-dependent study of off-state breakdown. We find that off-state breakdown at room-temperature is drain-gate limited and that the breakdown voltage shows a negative temperature coefficient. Based on these and other findings, we propose that off-state breakdown is a two-step process. First, electrons are injected by thermionicfield emission from the gate to the insulator. Second, electrons enter into the high-field drain-gate region of the channel hot, and relax their energy through impact-ionization. This combined mechanism explains our experimental observations that off-state breakdown in InAIAs/n+-InCaAs HFET's depends both on channel and insulator design. Our findings are relevant to other InAIAs/InGaAs HFET's, such as the MODFET, as well as HFET's based on other narrow-bandgap materials.

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Section: F Gate Electrons Not Source Electrons Are Responsible Formentioning

confidence: 99%

Physics of breakdown in InAlAs/n/sup +/-InGaAs heterostructure field-effect transistors

Bahl

Alamo

1994

IEEE Trans. Electron Devices

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“…Much attention has been paid to the effect of impact-ionization in the'smaller band gap InGaAs channel material [3][4][5][6][8][9][10]]. In fig.…”

Section: Leakage and Breakdown Mechanismmentioning

confidence: 99%

High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage

Prost

Tegude

Seventh International Conference on Indium Phosphide and Related Materials

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“…Recently, there is a great interest to improve the breakdown performance with special respect to high speed power applications [2]. Different types of breakdown (buffer [3], onstate impact ionisation [4], off-state gate-drain field [ 5 ] ) have been identified. Novel HFET layer stacks with improved wide-band gap material [6,7], modified doping schemes [SI and gate-recess technology [9] have been developed.…”

Section: Introductionmentioning

confidence: 99%