Analysis of GIDL-Induced off-State Breakdown in High-Voltage Depletion-Mode nMOSFETs

Tsai

et al. 2016

The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this study is realized by self-aligned N− implantation through dual thicknesses of screen oxide during N− drift implantation. Compared with traditional devices, devices with gradual junctions have improved off-state breakdown voltage (V BD) without sacrificing on-state driving current and hot-carrier-induced degradation. More improvement in V BD is observed if the dimensions of the device are larger. The mechanism responsible for V BD improvement in devices with gradual junctions is also investigated by using technology computer-aided-design simulations.

Section: Introductionmentioning

confidence: 99%

Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region

Tsai

et al. 2016

“…The doping concentration of the n − drift region has been shown to significantly affect the V BD and hot-carrier-induced degradation of high-voltage n-type MOS transistors. [15][16][17][18][19][20] In this study, a fixed dose of phosphorus implantation is applied in the n − drift region of the device. Subsequently, various doses of BF 2 counter-doped implantation are applied in the n − drift region to vary the net donor concentration in the n − drift region.…”

Section: Introductionmentioning

confidence: 99%

Drift region doping effects on characteristics and reliability of high-voltage n-type metal–oxide–semiconductor transistors

Chang

Liu

et al. 2015

In this study, off-state breakdown voltage (V BD) and hot-carrier-induced degradation in high-voltage n-type metal–oxide–semiconductor transistors with various BF2 implantation doses in the n− drift region are investigated. Results show that a higher BF2 implantation dose results in a higher V BD but leads to a greater hot-carrier-induced device degradation. Experimental data and technology computer-aided design simulations suggest that the higher V BD is due to the suppression of gate-induced drain current. On the other hand, the greater hot-carrier-induced device degradation can be explained by a lower net donor concentration and a different current-flow path, which is closer to the Si–SiO2 interface.

“…[1][2][3][4][5][6][7] The suppression of GIDL to improve off-state V BD has been reported by using dose optimization in the N-type minus (N-) drift region or structure modification. [8][9][10][11][12][13] However, most of the methods to improve off-state V BD also cause other side effects such as drivability current (I Dsat ) drop and on-resistance (R ON ) increase.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Lateral Diffused Metal–Oxide–Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide

Yan

Lin

et al. 2013

Characteristics of lateral diffused metal–oxide–semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off- and on-state bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.