Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications

Chang, Ching‐Wen; Asbeck, P.M.; Wang, K.-C.; Brown, E. R.

doi:10.1109/16.202778

Cited by 44 publications

(12 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Based on the well-known Esaki-Tsu integral formula for the tunneling current, many modifications and improvements have been made, such as the work by Coon et al [57] and Chang et al [58]. Analytic models for the RTD current such as those offer simple formulas relating the most important physical ingredients of RTD operation but do not adequately predict experimental I-V behavior.…”

Section: Other Rtd Modelsmentioning

confidence: 99%

See 1 more Smart Citation

Resonant tunneling diodes: models and properties

et al. 1998

View full text Add to dashboard Cite

show abstract

Section: Other Rtd Modelsmentioning

confidence: 99%

“…The combination of these devices now holds great promise for very high speed/functionality circuits. In the next section, we will mainly consider an RTD-HBT-based circuit as an illustration [58], but certainly RTD-HEMT based circuits and other circuits are also very important and are being pursued.…”

Section: Device Propertiesmentioning

confidence: 99%

Resonant tunneling diodes: models and properties

et al. 1998

View full text Add to dashboard Cite

show abstract

“…12 shows the simulation output for this circuit. It was shown in [18] that four such adders, with a ripple carry scheme, along with a buffering and feedback scheme for the carry out of the last bit, could achieve a throughput of 1 32-b addition every 1.5 ns. Table I shows the simulation time and the data memory required, for several different RTT circuits.…”

Section: B Simulation Of Large Circuits Using Rhe Rit Modelmentioning

confidence: 99%

“…In [15], a network consisting of two JFETs, one diode, and a current source was used to model a tunnel diode fairly accurately and could also be used to model RTDs. Just as in the case of tunnel diodes in [16] and [17], RTDs have also been modeled using polynomial and trigonometric curve fitting method [18]. Polynomials of order less than five do not provide adequate accuracy for circuit simulation, even though quadratic and cubic functions can satisfactorily model portions of interest of thecurve.…”

Section: Rtd Circuit Simulation Status Reviewmentioning

confidence: 99%

Device and circuit simulation of quantum electronic devices

Mohan

Sun

Mazumder

et al. 1995

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

View full text Add to dashboard Cite

Research Group for RTD and other quantum devices having folded-back I-V.First augmented circuit simulator version was named NDR SPICE (1994) and was added with simple mechanisms like forced convergence routine to recover from oscillatory (non-convergence) situations in DC simulation. The second version, named QSPICE (1999), was augmented with homotopy-based convergence routine, named RTD-stepping as well as a novel limiting algorithm to overcome the limitations of source stepping and Gmin stepping that are used in commercial SPICE simulators. The component model of NDR and QSPICE were added with a host of quantum tunneling devices, including resonant tunneling diode (RTD), bound state resonant tunneling transistor (BSRTT), resonant tunneling barrier transistor (RTBT), resonant hot electron transistor (RHET), and surface tunneling transistor (STT).IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 14, NO. 6, JUNE 1995 653Device and Circuit Simulation of Quantum Electronic Devices S. Mohan, J. P. Sun, Pin& Mazumder, Member, IEEE, and G. I. Haddad, Fellow, IEEE Abstract-Quantum electronic devices such as resonant tunneling diodes and transistors are now beginning to be used in ultrafast and compact circuit designs. These devices exhibit negative differential resistance (NDR) and/or negative transconductance in their I-V characteristics and have active dimensions of a few nanometers. Since the conventional drift-diffusion approximation is not valid for simulation of device behavior at this microscopic scale, quantum simulation models based on the Schriidinger equation are required to accurately predict the behavior of the device. However, these models are too slow for circuit simulation. This paper describes a modeling scheme that maintains the accuracy of the quantum simulation while achieving satisfactory speed for circuit simulation, and is applicable to a wide range of two and three terminal resonant tunneling devices and may also be extended to future scaled-down MOS and bipolar devices. A self-consistent solution of the Poisson and the Schriidinger equations for various bias points is used to build up tables of conductances, capacitances and other parameters.

show abstract

“…Curve-fitting has also been used extensively wherein the I-V characteristic was approximated by a piecewise-linear model, see Mohan et al [6], or by a piecewise nonlinear model utilising a diode for each of the PDR regions, see Neculoiu and Tebeanu [7]. Similarly, polynomial curve-fitting techniques, Chang et al [8], have also been used. Macro-modelling and curve fitting are essentially nonphysical techniques introducing well-behaved functions to model a device whose operation is quite complex.…”

Section: Introductionmentioning

confidence: 99%

Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Kriplani

Bowyer

Huckaby

et al. 2011

Active and Passive Electronic Components

View full text Add to dashboard Cite

A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.

show abstract

Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications

Cited by 44 publications

References 11 publications

Resonant tunneling diodes: models and properties

Resonant tunneling diodes: models and properties

Device and circuit simulation of quantum electronic devices

Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Contact Info

Product

Resources

About