Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy

Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

“…In MS diodes, the I–V characteristic of the diode deviates from the ideal due to the series resistance effect in the high voltage region, especially in the case of forward bias. The low R s value of the diode directly affects the n value of the diode [37,38] . When Table 1 is examined, it is seen that the R s value of the reference diode is higher.…”

“…Considering that n =1 for an ideal diode, [33] we can say that the organic interface material improves the n value of the diode. This is attributed to the electrical conduction caused by the electron exchange between the donor and acceptor groups of the organic material [34–51] . In addition, the organic interface layer increased the potential barrier of the diode.…”

“…The low R s value of the diode directly affects the n value of the diode. [37,38] When Table 1 is examined, it is seen that the R s value of the reference diode is higher. Therefore, the n value of the reference diode will also be higher.…”

“…This is attributed to the electrical conduction caused by the electron exchange between the donor and acceptor groups of the organic material. [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] In addition, the organic interface layer increased the potential barrier of the diode.…”