Analysis of InP Schottky/tunnel metal-insulator-semiconductor diode characteristics with a conductance technique

Abstract

The current-voltage characteristics (I-V) of Au-n-type InP Schottky diodes and MIS Schottky diodes fabricated by multipolar plasma oxidation are measured at various temperatures in order to investigate the applicability of a newly proposed conductance technique. Experimental data are analysed on the basis of this technique relating the series resistance Rs and the ideality factor n to the conductance G=dI/dV, and leading also to the determination of the saturation current Is. The values obtained for the temperature coefficient of the Schottky barrier height alpha were -1.3*10-4 eV K-1 and 4.1*10-4 eV K-1, depending on the substrate, and the ideality factors were around 1.07. The Richardson plot ln(Is/T2) against (1/T) is well fitted to a straight line (T is the temperature). It is shown that, when some conditions discussed in the paper are fulfilled; the method can be applied to MIS Schottky diodes. In this case the apparent barrier height phi Bh increases linearly with increasing temperature and the electron tunnelling factor is estimated to be 16.

Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature

“…The barrier height at zero bias qφ B0 and the tunnelling factor (aχ 1/2 δ) are deduced from the slope of this straight The value of qφ B0 (table 2) is higher than that measured for the n-InP MIS structure with oxide prepared by the anodization technique [18] and higher than that obtained from the data that we have obtained before [11] in the case of a PO x N y H z interfacial layer. The value of the mean barrier height χ is greater than that determined from the data obtained by Pande and Shen [26] but is lower than that deduced by Hattori and Torii [10] in the case of a P x O y interfacial layer and for n-InP MIS diodes with 90 Å of oxide fabricated by multipolar plasma oxidation [27]. However, greater differences of χ were also observed for n-InP MIS structures with different oxides in the interfacial layer and/or with different metals.…”

Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes

“…The performance and reliability of an SBD are drastically influenced by the interface quality between the deposited metal and the semiconductor surface. Therefore, the formation and characterization of metal/InP devices have been the subject of a vast number of fundamental studies [9][10][11][12][13][14][15][16][17][18]. The observed current-voltage (I-V ) characteristics of the real SBDs usually deviate from the ideal thermionic emission (TE) model, such as the strong dependence of both BH and the ideality factor on temperature, the difference in BHs obtained from different methods and the nonlinearity of the Richardson plots [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33].…”

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

“…[1][2][3][4][5] The formation of high-quality Schottky barrier diodes (SBDs) with a low ideality factor using thin interfacial films is one of the essential prerequisites for devices. 1,[5][6][7][8][9][10][11][12][13][14] Furthermore, the metal-insulating semiconductor (MIS) structure is more desirable than the Schottky junction because the former generally has much higher barrier than the latter. In MIS structures, a thin transition-interfacial layer separates the metal from the semiconductor surface.…”

“…To resolve the discrepancy between the barrier-height values expected from the simple Schottky-Mott rule and experimental barrierheight values, Bardeen 8 proposed interface states that determine the position of the Fermi level within the bandgap at the interface, thus the barrier height becomes independent of the metal used. So far, many attempts [9][10][11][12][13][14] have been made to realize a modification of the Schottky barrier height (SBH) using a thin oxide or insulation layer. Moreover, Song et al 15 and Mui et al 16 have studied the experimental data of the GaAs Schottky diodes, considering the image-force lowering effect.…”