Analysis of laser ablation process in semiconductor due to ultrashort-pulsed laser with molecular dynamics simulation

Molecular dynamics simulation study on ablation of silicon by water-jet-guided laser

“…The pulse lengths ( L ¼ 100 fs) of laser beam with uniform intensity distribution traveled in direction z and entered the system from the top l ¼ 266 nm were usually used for previous researches. 8 For the first 0:2 ps, the particles were damped to T 0 , followed by a relaxation period of 0:8 ps which as shown in Figure 2(b), the laser was starting at t ¼ 1:0 ps. The laser energy was deposited on each atom according to the Lambert-Beer's law 14…”

“…For example, Herrmann et al 6 studied the effect of picosecond and femtosecond laser pulses on ablation surfaces. Ho et al 7 and Watanabe et al 8 investigated the ablation of silicon by ultrashort pulsed laser at al. The effect of water-jet was investigated by experimental techniques as in Sibailly et al 2 Compared with experimental technique, molecular dynamics (MD) simulation has the advantage that more details can be obtained about the ablation of the material, such as the ablation process, the generation and propagation of thermal shock waves.…”

Characterization and control of laser induced modification inside silicon

“…Besides, large transverse intensity will cause chipping and microcracks in cut end-faces [7]. Moreover, laser ablation [8,9] or laser thermal breaking have also been used to do dicing [10,11]. The disadvantage of this method is that it will generate heat and debris pollution and affect device property and reliability.…”