2015
DOI: 10.1134/s1063776115050155
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Analysis of optical and magnetooptical spectra of Fe5Si3 and Fe3Si magnetic silicides using spectral magnetoellipsometry

Abstract: The optical, magnetooptical, and magnetic properties of polycrystalline (Fe 5 Si 3 /SiO 2 /Si(100)) and epitaxial Fe 3 Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe 5 Si 3 is measured using multiangle spectral ellipsometry in the range of 250-1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe 5 Si 3 and Fe 3 Si in the range of 1.6-4.9 eV. The spectral dependence of magnetic circular dichroism for bo… Show more

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Cited by 12 publications
(1 citation statement)
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“…To this day, several Fe-silicide structures have been reported. At the Fe-rich side of the binary phase diagram, metallic as well as ferromagnetic F e 5 Si 3 and F e 3 Si (DO 3 structure) [7,8]have already been established as key materials for spintronics [8,9]. The Si -rich side of the phase diagram contains several variants of a disilicide stoichiometric compound, such as the high-temperature tetragonal metallic α − F eSi 2 phase [11], with applications as an electrode or an interconnect material [12,13], and the orthorhombic semiconducting β − F eSi 2 phase [14], which due to its direct band gap is an interesting candidate for thermoelectric, photovoltaic and optoelectronic devices [15].…”
Section: Introductionmentioning
confidence: 99%
“…To this day, several Fe-silicide structures have been reported. At the Fe-rich side of the binary phase diagram, metallic as well as ferromagnetic F e 5 Si 3 and F e 3 Si (DO 3 structure) [7,8]have already been established as key materials for spintronics [8,9]. The Si -rich side of the phase diagram contains several variants of a disilicide stoichiometric compound, such as the high-temperature tetragonal metallic α − F eSi 2 phase [11], with applications as an electrode or an interconnect material [12,13], and the orthorhombic semiconducting β − F eSi 2 phase [14], which due to its direct band gap is an interesting candidate for thermoelectric, photovoltaic and optoelectronic devices [15].…”
Section: Introductionmentioning
confidence: 99%