Analysis of power consumption in LC oscillators based on the inversion coefficient

Chicco, Francesco; Pezzotta, A.; Enz, Christian

doi:10.1109/iscas.2017.8050648

Cited by 8 publications

(6 citation statements)

References 8 publications

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“…Voltage-biasing is an obvious choice dictated by the limited supply voltage: 4 diode connected devices M 1B−4B provide V G1−4 to impose the bias current I B = N I ref , where I ref is a programmable current produced by a PTAT circuit and a current DAC. I B is chosen such that the all the transistors work in moderate inversion for best efficiency [8].…”

Section: A Low Power and Low Voltage Oscillator Structurementioning

confidence: 99%

Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars

Chicco

Rengifo

Pengg

et al. 2021

IEEE Microw. Wireless Compon. Lett.

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This work presents the design of a 24 GHz DCO in an advanced 28-nm bulk CMOS technology for short-range Frequency-Modulated Continuous-Wave radar System-on-Chip for mobile and Internet-of-Things devices. The power minimization is therefore the primary focus. The oscillator consumes a record low power of 1.2 mW at a 0.65 V supply voltage. It achieves a very large frequency tuning range of 5.8 GHz (27%) and a 150 kHz resolution without significantly degrading the phase noise. The proposed design methodology results in a State-of-the-Art −193 dBc/Hz FoMT.

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Section: A Low Power and Low Voltage Oscillator Structurementioning

confidence: 99%

Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars

Chicco

Rengifo

Pengg

et al. 2021

IEEE Microw. Wireless Compon. Lett.

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“…When the amplitude reaches V DD , it remains almost constant even if the bias current is increased further, making the oscillator to work in the so-called "voltage limited" regime [4].…”

Section: Equivalent Noise Modelmentioning

confidence: 99%

Linear analysis of phase noise in LC oscillators in deep submicron CMOS technologies

Chicco

Capoccia

Pezzotta

et al. 2017

2017 International Conference on Noise and Fluctuations (ICNF)

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Abstract-This paper investigates the phase noise in LC oscillators with NMOS cross-coupled pair by means of a linear analysis. The latter includes the impact of noise sources that are often neglected, such as gate leakage shot noise, induced gate noise and all terminal access resistances noise. Despite not considering up-conversion of flicker noise, this linear analysis still provides reliable and useful results, demonstrated by means of a detailed comparison between the analytical description and simulations results from a 40 nm and a 28 nm CMOS technology.Index Terms-LC oscillators, phase noise, linear analysis, inversion coefficient I. INTRODUCTIONThe typical architecture of transceivers used in radios relies on frequency synthesizers for generating accurate and low-noise carriers, which are used to up-and down-convert the base-band signal carrying data. Voltage-Controlled-Oscillators (VCO) are one of the key building blocks of frequency synthesizers and they are usually classified in two families: harmonic (i.e. LCbased) and relaxation oscillators (i.e. ring-based). The former category includes the oscillators which are more suited for the aforementioned purpose, since they embed an LC tank to select the target frequency. As a consequence, the output is an almost perfect sinusoid and its phase noise performance is pretty good, compared to the more noisy square wave produced by a ring-oscillator. However, the better output signal quality comes at the price of a larger power consumption.As a matter of fact, due to technology scaling, the impact of parasitic resistances has increased. Indeed, even if the metallic gate has become a process option for most recent technology nodes (e.g. 28 nm technology), the gate resistance measured on these devices is still relevant and even greater than in older nodes [1] [2]. Moreover, the gate leakage shot noise contribution has increased mainly due to the shrinking of the gate oxide thickness, although the inclusion of high-k dielectric materials in latest nodes should attenuate this effect.An analytical derivation of phase noise is carried out including all noise sources, highlighting the transfer function of each of them to the output. The complete expressions come also in a simplified form, in order to provide an insight into possible strategies for noise optimization.The paper is organized as follows. In Section II the description of the circuit and of the transistor model with the noise sources is carried out. Section III details the analysis showing a comparison between analytical and simulated results, followed by conclusions.

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“…These high-end features become the prerequisite of the advanced systems to perform necessary operations smoothly. However, conventional voltage-controlled oscillators (VCOs) typically consume a large amount of power to perform the operations [4]. Previously, spin torque oscillators (STOs) have been investigated as a source of microwaves, as STOs are, in general, highly tuneable and offer small chip size compared to existing VCOs [5], [6], however, suffers from the weak output signal.…”

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confidence: 99%

Generation of Microwaves With Tuneable Frequencies in Ultracompact “Magnon Microwave Antenna” via Phonon-Magnon-Photon Coupling

Samanta

Roy

2023

IEEE Trans. Electron Devices

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Here, we report a "magnon microwave antenna" (MMA) for the generation of microwaves with tuneable frequencies, based on modulation of confined spin waves (SWs) in the patterned array of magnetostrictive nanomagnets/piezoelectric heterostructures caused by the surface acoustic waves (SAWs). A SAW launched on a piezoelectric substrate produces a periodic strain within the nanomagnets patterned on it, which, in turn, stimulates magnetization precession resulting in different magneto-dynamical resonance modes in the array of nanomagnets with a rich SW texture. The generated SWs (magnons) further interact with the EM radiation (photons) at the SAW frequency. The phonon-magnon-photon coupling in the patterned array of nanowires (NWs) generates a 0.56 GHz microwave frequency with a 13.9 MHz linewidth and a Q-factor of 40, while that in a matrix of nanodots (having same overall area) provides tuneable frequencies leading up to 30 GHz with a linewidth of 59.1 MHz and an enhanced Q-factor of 439; having nonvolatile spin textures in both the cases. The generated nonvolatile spin textures of the NWs/nanodots can also be useful in energy-efficient logic and low-power computing applications.

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Analysis of power consumption in LC oscillators based on the inversion coefficient

Cited by 8 publications

References 8 publications

Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars

Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars

Linear analysis of phase noise in LC oscillators in deep submicron CMOS technologies

Generation of Microwaves With Tuneable Frequencies in Ultracompact “Magnon Microwave Antenna” via Phonon-Magnon-Photon Coupling

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