Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

Caparroz, Luis F. V.; Bordallo, Caio Cesar Mendes; Martino, João Antônio; Simoen, Eddy; Claeys, Cor; Agopian, Paula Ghedini Der

doi:10.1088/1361-6641/aabab3

Cited by 5 publications

(4 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…No bias was applied during the irradiation and all the devices were unpackaged. Other studies that used the same irradiated devices can be found in [5,15,17]. The measurements for this study were performed at room temperature, using the Keysight Agilent B1500A semiconductor device analyzer at University of Sao Paulo (LSI/USP).…”

Section: Device Characteristicsmentioning

confidence: 99%

“…Although previous works have already analyzed the protonirradiation and its influence on analog figures-of-merit for the same devices [5,15], this work proposes the analysis of the influence of the proton-irradiation on the voltage gain of an operational transconductance amplifier (OTA), where the OTA is designed using detailed experimental data extracted from the SOI FinFET electrical characterization (before and after proton-irradiation) and using the lookup table method approach with the Verilog-A language. SOI p-and n-type Fin-FETs with three fin widths (20 nm, 120 nm, and 870 nm) before and after being exposed to proton irradiation are analyzed at the same inversion region (g m /I D = 8 V −1 ).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Sousa¹,

Nogueira²,

Agopian³

et al. 2021

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

In this work, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied. The OTA simulations were performed using Verilog-A approach based on experimental data extracted from the SOI FinFET electrical characterization, before and after proton-irradiation. The OTA is designed with SOI FinFETs of fin widths (W fin) of 20 nm, 120 nm, and 870 nm, all in the same predefined inversion region (g m/I D = 8 V−1). All evaluated OTA circuits exposed to proton-irradiation presented a voltage gain increase (compared with pre-irradiation circuits), of 0.87 dB, 1.19 dB, and 6.16 dB for fin widths of 20 nm, 120 nm, and 870 nm, respectively. The results show that despite the typical radiation effect of degradation of the individual transistors (it being more severe for larger fin width SOI FinFET), these effects combined in OTA circuits result in an unexpected improvement in DC voltage gain, especially for wider fins. Focusing on the fin width impact on the OTA voltage gain, before and after proton-irradiation, it is much greater for narrow fin width SOI FinFET thanks to the better Early voltage.

show abstract

Section: Device Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Sousa¹,

Nogueira²,

Agopian³

et al. 2021

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Since the FinFET response to the proton radiation is well known [11,15], FinFET devices will play a double role in this article. Besides being our reference for the comparison of the behaviors of the different technologies, it will have the important role of serving as a reference sensor to be sure of the effectiveness of irradiation since both transistors (FinFETs and TFETs) were fabricated on the same die.…”

Section: Device Characteristics and Experimental Detailsmentioning

confidence: 99%

Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

Agopian

Torres

Martino

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper compares, for the first time, the total ionizing dose degradation of 600 keV protonirradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the same structure on the same wafer. This work is based on electrical measurements and TCAD simulations. Devices with different dimensions were exposed up to 10 Mrad(Si) dose of proton radiation. For transistors with narrow fin width, the radiation influence is negligible in both devices types. For W FIN =250 nm and a proton radiation dose up to 10 Mrad(Si), on the other hand, a severe influence is observed in nFinFETs and pFinFETs present on the same die as the p-type TFETs. In the TFETs, no marked influence is observed. Only for a TFET of W FIN =500 nm and 10 Mrad(Si) one can observe some radiation influence. The main degradation is caused by the buried oxide positive fixed charges and the interface traps which was also confirmed by TCAD simulations. The tunneling current of Tunnel-FETs presents a much better radiation hardness compared to the drift-diffusion current of SOI FinFETs.

show abstract

“…One of the MOSFET technology application is the use of it in radiation environment, for instance, applying this technology as a radiotherapy dosimeter [6] or gamma and x-rays sensors [7] in conventional MOSFETs. In addition, as reported in [8][9][10], the FinFET with fin width (W FIN ) equal to 20 nm shows a high immunity to accumulated effects caused by proton total ionization dose (TID), even considering the charges accumulated in the gate oxide and in the buried oxide, due to the high coupling between the gates. Furthermore, there are studies that also evaluate the negative bias temperature instability (NBTI) in FinFETs applied to radiation environment [11].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Spacer Oxide Material on the Underlapped SOI-nFinFET Working as Charged Based Radiation Sensor

Fonseca

Agopian

2021

JICS

Self Cite

View full text Add to dashboard Cite

In this work, the influence of the underlap region on the electrical behavior of a SOI-nFinFET transistor has been studied with the purpose of radiation sensing. The analysis was performed by evaluating the impact of variations in the underlap region on the on-state current and by studying its sensitivity. The impact of the underlap region on the drain current and, consequently, on the devices’ sensitivity was explained by the analysis of series resistance, the fringing field and electron density. Considering the main impact of radiation in these devices, the study of sensitivity was also performed taking into consideration the variation of oxide trapped charges density. When applying the transistor to a harsh environment, the Underlapped FinFET showed to be a quite respectable radiation sensor, since the results performed with very good sensitivities when using long and narrow spacer oxide with low permittivity oxide. With thicker spacer oxide in the underlap region, the charge concentration makes the spreading field high enough to overcome the series resistance effect, which results in a less sensible device. Once presented the on-state current variation of the Underlapped FinFET, the study turns radiation-sensing purpose applicable using the excellent characteristics of this device, which is shown in detail throughout this work.

show abstract

Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

Cited by 5 publications

References 14 publications

Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

The Impact of Spacer Oxide Material on the Underlapped SOI-nFinFET Working as Charged Based Radiation Sensor

Contact Info

Product

Resources

About