Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

Viana, C.E.; Silva, Ana N. R. da; Morimoto, Nilton Itiro; Bonnaud, Olivier

doi:10.1590/s0103-97332001000200023

Cited by 28 publications

(11 citation statements)

References 4 publications

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“…However, as mentioned before a certain oxide thickness (≈50 nm for SiC MOS devices) is necessary for a reasonable threshold voltage, which means very thin oxide is not practical in real device fabrications. Thin thermally grown oxide with deposited oxide on top of it may be an option but still not easy, since deposited oxide is known to contain many more defects than thermally grown ones [51].…”

Section: Sic/sio 2 Interface Trapsmentioning

confidence: 99%

Main Differences in Processing Si and SiC Devices

Li¹,

Jennings²

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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Due to the different physical properties of Si and SiC, many conventional Si device processing techniques cannot be directly transferred to SiC device fabrication. To deliver high-performance SiC commercial power devices, new techniques quite different from Si industry were developed in past decades for processing device, such as dopant implantation, metal contact, MOS interface, etc. On the other hand, the physics model behind many of these SiC processing technologies is not updated in the same pace that the success of them can still not be fully understood.The activation of dopants in 4H-SiC has been intensively studied, and the efforts are mainly put into two directions, namely, protecting the semiconductor surface morphology while at the same time maximising the active concentration of implanted dopants. Figure 1. Schematic graph showing a typical dopant thermal diffusion process using a gas source. Main Differences in Processing Si and SiC Devices

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Section: Sic/sio 2 Interface Trapsmentioning

confidence: 99%

Main Differences in Processing Si and SiC Devices

Li¹,

Jennings²

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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“…[43]. [41] We also employ the Drude-Lorentz type oscillator to model the vibration of the emitter. The spectral position of these modes can again be a strong function of temperature, molecular weight, and molecular composition.…”

Section: Background Concept Fabrication and Characterizationmentioning

confidence: 99%

“…[39] However, unreacted radicals of TEOS are often trapped by the structural defect and lead to the presence of CC bonds in the micro-Raman spectrum as the wafer defect. [41] Such IR inactivity arises due to the absence of net transition moment (M) in the volume d τ defined as As per the rule of mutual exclusion, for centrosymmetric molecules, the Raman active modes are IR inactive, and vice versa.…”

Section: Introductionmentioning

confidence: 99%

High Temperature Coupling of IR Inactive CC Mode in Complementary Metal Oxide Semiconductor Metamaterial Structure

Hasan

Pitchappa

et al. 2017

Advanced Optical Materials

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realizing the aforementioned applications in a broad wavelength range starting from the visible to microwave spectrum. [7][8][9][10][11][12][13][14] Thanks to the pioneering role of nanotechnology, complicated plasmonic architectures with multifunctionalities have been already demonstrated. [15][16][17][18][19][20][21][22][23][24][25][26] However, large scale application of plasmonic metamaterial is strongly dependent on both the scalability and repeatability of the fabrication process which can be reasonably ensured in CMOS technology. Very recently, CMOS fabricated designer optical structures have been reported to achieve high Q Fabry-Pérot resonance for gas sensing, [27,28] MEMS tunable metamaterials for terahertz communication, [29,30] and switchable mid-IR absorber [31] while relying on a fairly challenging process flow. A recent paradigm shift in the field of nanophotonic and metamaterial research is the increasing investigation of phonon modes in bulk and 2D form [32,33] especially in the mid-IR domain (3-8 µm), the primary motivation being arose by the low loss and multifunctional nature of these modes. Under CMOS consideration, such mode has been explored in SiO 2 thin film originating from the SiO and SiD vibration. [34] However, all infrared (IR) phonon modes in bulk form reported so far are intrinsically active with net dipole moment due to the polar nature of the dielectric and investigation into IR inactive modes with no net dipole moment needs to be carried out. On the other hand, due to the electrical characteristic of vibrations, the IR activity and Raman activity are complementary to each other, meaning an IR inactive mode becomes Raman active and vice versa. [35] One example of strongly IR inactive mode is the sp 2 -hybridized >CC< vibration. [36] Interestingly, such IR inactivity can be theoretically broken by causing asymmetry into the >CC< bond and inducing the net dipole moment in the oscillator. Infrared observation of Raman-active G band and D band has been reported in fact by symmetry breaking in nitrogen doped amorphous carbon. [37] In this work, however, we consider carbon rich SiO 2 thin film obtained by tetraethyl orthosilicate (TEOS)-based chemical vapor deposition (CVD) and report unusual switching behavior of the >CC< bands being strongly dependent on temperature. We further leverage such thermally induced asymmetry driven excitation of IR inactive mode in CMOS dielectric and couple it into the CMOS metamaterial structures as a means of thermal modulation of their resonance spectra. We High temperature (up to 400 °C) coupling of infrared (IR) inactive >CC< mode is reported in complementary metal oxide semiconductor (CMOS)-compatible refractory metamaterial filter and absorber structure by leveraging the carbon defects in tetraethyl orthosilicate obtained plasma enhanced chemical vapor deposition SiO 2 thin film. Here, the role of strain gradient induced dipole moment in high stress configuration on the activation of otherwise inactive >CC< vibration at IR is confirmed. The ...

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“…A small peak has been found around 600 cm À1 , which corresponds to Si-O stretch. [37][38][39] Static contact angle measurements of samples T6 is performed and is illustrated in Figure 6b. The small peak at 1 260 cm À1 , corresponding to Si-CH x deformation, might be explained by the incomplete shielding of the silica surface with trimethylsilyl groups (the area occupied by each ÀSi(CH 3 ) 3 group is 0.416 nm 2 ) from contact with water.…”

Section: Sample Namementioning

confidence: 99%

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

et al. 2017

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In this work, the use of a newly developed direct liquid injection low pressure chemical vapor deposition (DLI-LPCVD) system is described, which allows for the deposition of thin films in a controlled and reproducible manner. The capabilities of this system are described via silica thin films deposited using the precursor tetraethyl orthosilicate (TEOS). The deposition of thin films is controlled by parameters, such as deposition temperature, partial pressure of the gases, and flow rate of the precursor solution. The thickness of the deposited layer is varied simply by changing deposition temperature and time. X-ray reflectivity and spectroscopic ellipsometry of the deposited samples show that the thickness of the layers is well controlled by deposition temperature and time. Auger electron spectroscopy, in addition, motivates our choice to use cyclohexane as a solvent. A growth rate of 12.2 Åmin À1 is obtained. Atomic force microscopy, Rutherford backscattering spectroscopy, Fourier transform infrared spectroscopy, and drop shape analysis are used to measure roughness, composition, and hydrophobicity. Thin films of silicon dioxide are successfully grown by the newly developed DLI-LPCVD system. This system can be used for a wide range of films by varying the precursors.

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Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

Cited by 28 publications

References 4 publications

Main Differences in Processing Si and SiC Devices

Main Differences in Processing Si and SiC Devices

High Temperature Coupling of IR Inactive CC Mode in Complementary Metal Oxide Semiconductor Metamaterial Structure

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

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