2002
DOI: 10.1109/ted.2002.1003722
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Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors

Abstract: Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addresses liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1 s) shows a clear dependence on the channel length. A hypothesis that electrical breakdown in the case of short channel TFTs is due to the punch-through is built on th… Show more

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Cited by 17 publications
(7 citation statements)
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“…Both the It2 and the channel resistance Ron are not correlated with SP, proving that the a-IGZO extensions (the SP region) are not the weak point. This suggests that the failure point is between the channel and the gate, as explained by literature for the amorphous Si case in [4].…”
Section: Thermal Hot Spotsupporting
confidence: 53%
See 1 more Smart Citation
“…Both the It2 and the channel resistance Ron are not correlated with SP, proving that the a-IGZO extensions (the SP region) are not the weak point. This suggests that the failure point is between the channel and the gate, as explained by literature for the amorphous Si case in [4].…”
Section: Thermal Hot Spotsupporting
confidence: 53%
“…The amorphous Indium-Gallium-Zinc Oxide (a-IGZO) material is one of the best candidates for low power flexible ASIC applications ( Figure 1) due to its high field-effect mobility [1,3]. Several publications have reported on ESD robustness, reliability and breakdown mechanisms of poly-Si TFTs, which are the preferred choice for displays, [4,5,6,8,9]. However, for the more recent a-IGZO TFTs, less publications are available.…”
Section: Introductionmentioning
confidence: 99%
“…To build the TFT we are using standard back etch technology reported in the literature [12]. The gate metal is made of a Mo/Al layer, the gate insulator is silicon nitride (SiN x ), and the source and drain contact material is Mo.…”
Section: Methodsmentioning
confidence: 99%
“…The drain voltage also makes the surface potential positive creating a two-dimensional field in the pinch-off region. 11 As a result, the barrier to the flow of charge is lowered and hence V T decreases. This effect is more noticeable in a-Si:H TFTs subjected to gate bias stress.…”
Section: Threshold Voltagementioning
confidence: 99%
“…8 Because carriers with higher thermal velocity are less likely to get trapped in the a-Si:H channel, µ sat increases with temperature. The a-Si:H TFT FSymbol"m sat temperature behavior is modeled in BSIM3 with the low-field mobility temperature expression (11) where UTE is the mobility temperature coefficient and UO is equivalent to µ sat . The parameter UTE extracted from the µ sat vs. temperature plot in Fig.…”
Section: Temperature Effectsmentioning
confidence: 99%