Analysis of the electron emission characteristics and working mechanism of a planar bottom gate vacuum field emission triode with a nanoscale channel

Abstract

A planar lateral Vacuum Field Emission Triode (VFET) with nanoscale channel of 80∼90 nm was fabricated on silicon wafer. The nanoscale channel of this vacuum triode was generated by using...

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

“…In general, Fowler–Nordheim (FN) tunneling and Schottky emission are the two primary mechanisms of the electron emission performances of NACDs. [ 5a,12a,21 ] The simplified linear FN equation explaining the relationship between the field emission current and anode voltage is given by Equation () [ 22 ] $$$$\begin{equation} \ln \left( {I/{V}^2} \right) = \ln A - B/V \end{equation}$$$$where A and B are the linear and exponential factors of the field emission current with values of A = 1.54×10 −6 β 2 φ −1 d −2 α and B = 6.83×10 9 dφ 3/2 β −1 . Here α is the effective field emission area, β is the field enhancement factor, φ is the work function of the cathode ( φ Au = 5.1 eV, φ GaN = 4.0 eV), and d is the length of the air channel.…”

“…Planar diode [26] Metal Nanosphere lithography 6.88 0.7 -Planar diode [27] Ta EBL 24 0.5 -Planar triode [21] PdO Electro-forming process 80-90 5 -…”

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

“…On the other hand, planar-type NVCTs with a typical back-gate structure are generally isolated by a dielectric layer from the gate and the nanoscale vacuum channel, which can greatly suppress the gate leakage current [ 12 , 13 , 14 , 15 , 16 ]. Moreover, the planar structure means that the emitter and the collector of the device are in the same plane, in which a sub-100 nm vacuum gap is created between them by high-precision processing [ 17 ].…”

A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect

“…Recently, many studies on vacuum electronic devices were conducted, involving vacuum diodes and triodes [20][21][22], where the vacuum channel length was designed at the nanometer scale. Thus, these devices can operate in air without performance degradation.…”

“…As is known to all, a vacuum is the superior media for carrier transportation, as opposed to semiconductor materials, where electrons travel ballistically without being scattered by a lattice or captured by defects. Vacuum electronics are generally considered to be more suitable for harsh environments [20][21][22] or faster detecting [23] than solid-state electronics. The existing vacuum devices are used for photon detection [23] or signal modulation [24,25].…”