Thin films of amorphous indium gallium zinc oxide amorphous indium-gallium-zinc-oxide (a-IGZO) were fabricated by DC magnetron sputtering. The influence of sputtering pressure on the microstructures and the electronic properties were investigated. AFM characterization on surface morphology demonstrates that the surface roughness increases with higher sputtering pressure. The oxygen vacancies of the a-IGZO films change considerably and are reduced significantly with increasing sputtering pressure, as disclosed by X-ray photoelectron spectroscopy. Both the increased surface roughness and reduced oxygen vacancy are detrimental to the performance of a-IGZO TFTs. From this point of view, the sputtering should be done at a proper pressure of 0.06 Pa in order to ensure the enhanced performance. The electron saturation mobility (μsat) and the threshold voltage (VTH) of the a-IGZO TFTs are 3.32 cm 2 /(V• s) and 24.6 V at such a sputtering condition, respectively.

black phosphorus (BP) materials, as the most promising building blocks for the development of artificial synapses, have attracted more and more attention. However, the instability of exfoliated 2D BP structures still remains a problem in the development of artificial synapse devices. In this study, the robust and low-power-consumption artificial-synapticbased BP was successfully manufactured. The synapse devices have high stability in the air atmosphere and do not show obvious degradation over 3 months. The obtained devices not only implement the main function of synapses but also perform the function of dendritic neural synapses and simple logical operations, revealing their very strong learning behavior. The high mobility of 2D BP as well as the coupled effect and quantum confinement effect of the graphene oxide quantum dot (GOQD) can greatly boost the performance of BP-based synapse devices, such as low power consumption (62 pW) and high sensitivity (ultrasmall stimuli at an amplitude of −20 mV). Moreover, benefiting from the GOQD and the interaction between BP and graphene, the main dominated mechanism of the BP− graphene synapse device can be the capture and release of electrons by the 2D BP and GOQD instead of the conductive filament.

A planar lateral Vacuum Field Emission Triode (VFET) with nanoscale channel of 80∼90 nm was fabricated on silicon wafer. The nanoscale channel of this vacuum triode was generated by using...

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