Nanoscale Vacuum Field Emission Triode With a Double Gate Structure

Wang, Xiao; Zheng, Chaofan; Xue, Tao; Shen, Zhijun; Long, Minggang; Wu, Shengli

doi:10.1109/led.2021.3136875

Cited by 11 publications

(7 citation statements)

References 29 publications

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“…It is noted that the NACTs with sub‐MFP air channels exhibiting excellent field emission performance have been created using IC‐compatible methods. Among them, our device has a relatively low V on and an outstanding field emission current of 11.7 mA@10 V, which is much higher than the previous reported NACTs [ 10 ] (generally much less than 1 mA@10 V). There are three possible explanations for the high output current of our GaN NACD.…”

Section: Resultsmentioning

confidence: 67%

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

et al. 2023

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Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high-frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub-100 nm air channels. Despite these advantages, NACTs are still limited by low currents and instability compared to solid-state devices. GaN, with its low electron affinity, strong thermal and chemical stability, and high breakdown electric field, presents an appealing candidate as a field emission material. Here, a vertical GaN nanoscale air channel diode (NACD) with a 50 nm air channel is reported, fabricated by low-cost IC-compatible manufacturing technologies on a 2-inch sapphire wafer. The device boasts a record field emission current of 11 mA at 10 V in the air and exhibits outstanding stability during cyclic, long-term, and pulsed voltage testing. Additionally, it displays fast switching characteristics and good repeatability with a response time of fewer than 10 ns. Moreover, the temperature-dependent performance of the device can guide the design of GaN NACTs for applications in extreme conditions. The research holds great promise for large current NACTs and will speed up their practical implementation.

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Section: Resultsmentioning

confidence: 67%

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

et al. 2023

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“…Therefore, the structural parameters of the emitter/collector electrodes, such as the emitter morphology and vacuum channel length, could extensively influence the emission current and operating voltage [ 20 ]. Furthermore, back-gate NVCTs are more compatible with existing IC processes, making them more attractive to researchers [ 21 , 22 , 23 ].…”

Section: Introductionmentioning

confidence: 99%

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Lin

Liu

et al. 2023

Micromachines

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Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.

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“…Historically, vacuum tubes were the primary components used in electronics until being gradually replaced by solid-state electronics which have the advantages of integration, miniaturization, power efficiency, and low cost . Recently, the emergence of micro-/nanoscale manufacturing technologies has led to a resurgence of interest in vacuum electronics, resulting in the development of a novel device known as nanoscale air channel device (NACD). , The critical channel length of the NACD, achieved using technologies such as electron beam lithography (EBL), , focused ion beam (FIB) etching, , electro-forming, buffered oxide etch (BOE), , and so forth, is close to or less than the mean free path (MFP) (≈68 nm) of air at room temperature and pressure (RTP). This enables the electrons to be transported ballistically without scattering in the air channel.…”

Section: Introductionmentioning

confidence: 99%

Radiation Immune-Planar Two-Terminal Nanoscale Air Channel Devices toward Space Applications

Fan,

Zhao,

Chen

et al. 2023

ACS Appl. Nano Mater.

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In space applications, electronics must function while being strongly radiated. In this work, the radiation hardness property of the planar two-terminal nanoscale air channel device (NACD), which is a device of vacuum electronics, was demonstrated. Specifically, the total ionizing dose (TID) effect and single-event effects (SEEs) on the NACD were investigated. Xray and pulse laser were utilized as the sources of TID radiation and SEE radiation, respectively. No significant degradation was observed after 1 Mrad(Si) X-ray radiation, and no single-event transient phenomenon was detected at the pulse laser energy up to 5 nJ. Additionally, the physical mechanism of radiation hardness in the NACD was illustrated by theoretical analysis and finite element simulation. Taken together, the proposed work shows that the radiation hardness property of the NACD may have a prospect in deep space and nuclear energy applications.

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Nanoscale Vacuum Field Emission Triode With a Double Gate Structure

Cited by 11 publications

References 29 publications

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Radiation Immune-Planar Two-Terminal Nanoscale Air Channel Devices toward Space Applications

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