Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range

Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs

“…. Fig.6: Fixed time measured (symbols) and modeled (lines) ∆VT as a function of (a) VGSTR at a fixed T, and as a function of (b) T at a fixed VGSTR for SOI FinFETs, from [16]. The underlying subcomponents are also shown.…”

“…All process agnostic free parameters are listed in [12]. Fig.3 illustrates the ABDWT model for VHT kinetics used in the enhanced BAT framework [15], [16]. It has two states E1 (uncharged) and E2 (charged) that are separated by a barrier (EB).…”

“…The double interface Reaction-Diffusion (RD) model is used for the time kinetics of interface trap generation and passivation (density is NIT), and their contribution (VIT) due to charge occupancy is modeled by the Transient Trap Occupancy Model (TTOM). Empirical stretched-exponential equations are used for TTOM and VHT in [12], and VHT equations are replaced using the Activated Barrier Double Well Thermionic (ABDWT) model, first proposed in [14], in recent reports [15], [16]. The empirical model is used for VOT [12].…”

“…Such variations can be manually done or modeled with empirical equations. However, VHT is modeled by ABDWT in [15], [16], and being a physical model it can automatically calculate the hole trapping and detrapping kinetics across all experimental conditions. Furthermore, the stochastic version of ABDWT can explain Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments as shown in [28].…”

“…This paper presents a comprehensive overview of our recent conference reports [15], [16]. NBTI time kinetics is modeled using BAT with ABDWT for VHT and validated against a wide range of experimental data.…”