Analysis of the reservoir effect on electromigration reliability

Jeon, Insu; Park, Young-Bae

doi:10.1016/j.microrel.2004.02.001

Cited by 22 publications

(12 citation statements)

References 29 publications

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“…On the other hand, sinks in general degrade EM performance by reducing the back stress built up at anode. The simulations results explain experimental results reported in[23].…”

supporting

confidence: 85%

Blech Effect in Interconnects

Abbasinasab

Marek-Sadowska

2015

Proceedings of the 2015 Symposium on International Symposium on Physical Design

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The majority of the existing experimental, theoretical and modeling works on electromigration (EM) are focused on simple, via-to-via structures, but complex interconnect structures have not been studied well. The lack of correct models for such interconnects may result in either conservative or weak design decisions which may result in catastrophic reliability failures. This paper proposes a physical model which holds for material migration as well as for lattice vacancy generation/annihilation. Using the developed model, well known circuit level EM assessment methods are examined by finite element modeling and simulation. The paper provides a compact model for EM analysis which can be easily implemented in CAD tools. We also explain some recent experimental results and empirical models published by other researchers.

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“…On the other hand, sinks in general degrade EM performance by reducing the back stress built up at anode. The simulations results explain experimental results reported in[23].…”

supporting

confidence: 85%

Blech Effect in Interconnects

Abbasinasab

Marek-Sadowska

2015

Proceedings of the 2015 Symposium on International Symposium on Physical Design

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“…High Joule heating is a distinctive characteristic of flip chip solder bumps due to their unique geometry, 10,15,16 while conventional chip Al and Cu interconnects show negligibly small Joule heating during typical electromigration conditions due to their simple materials and geometries. 2,3,17 The cumulative distribution function (CDF) of Sn-3.5Ag flip chip solder bump failure time is plotted in Fig. 5 for the different investigated temperatures and current densities.…”

Section: Electromigration Lifetime Characteristicsmentioning

confidence: 99%

“…With the exception of the test condition of 160°C and 3 9 10 4 A/cm 2 , lower temperature and current density result in a smaller r, which is typical for conventional electromigration tests. 2,3,17 From the lifetime data summarized in Fig. 5 and Table I, the electromigration activation energy (E a ) and the current density exponent (n) for Sn-3.5Ag solder bump were calculated using Black's equation 18 :…”

Section: Electromigration Lifetime Characteristicsmentioning

confidence: 99%

“…This phenomenon has been actively investigated for over 20 years in chip interconnect materials, such as Al, Al(Cu), and Cu. [1][2][3] Electromigration phenomena in flip chip solder bumps are very different from those in chip interconnects due to their unique geometry and complex material structure. Several failure mechanisms are associated with solder bumps: electromigration, Joule heating, current crowding, intermetallic compound (IMC) evolution, Kirkendall voids, 4 and thermomigration.…”

Section: Introductionmentioning

confidence: 99%

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Abnormal Failure Behavior of Sn-3.5Ag Solder Bumps Under Excessive Electric Current Stressing Conditions

Lee¹,

Park

2009

Journal of Elec Materi

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Abnormal failure behavior of flip chip Sn-3.5Ag solder bumps with a Cu underbump metallurgy under excessive electric current stressing conditions is investigated with regard to electromigration lifetime characteristics and damage evolution morphologies. Abnormal behavior such as abrupt changes in the slope of the resistance versus stressing time curve correlate well with the changes in mean time to failure and the standard deviation with respect to the resistance increase ratio, which seems to be strongly related to highly accelerated electromigration test conditions of 120°C to 160°C and 3 9 10 4 A/cm 2 to 4.6 9 10 4 A/cm 2 . This is closely related to changes in the damage evolution mechanism with time, even though the activation energy for electrical failure is primarily controlled by Cu diffusion through Cu-Sn intermetallic compound layers.

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“…Previous studies [1][2][3] showed that electromigration (EM) lifetime can be prolonged by reservoir length since the line extension part serves as reservoir of atoms during EM.…”

Section: Introductionmentioning

confidence: 99%

Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects

Tan

et al. 2010

Microelectronics Reliability

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Analysis of the reservoir effect on electromigration reliability

Cited by 22 publications

References 29 publications

Blech Effect in Interconnects

Blech Effect in Interconnects

Abnormal Failure Behavior of Sn-3.5Ag Solder Bumps Under Excessive Electric Current Stressing Conditions

Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects

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