Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

Redondo-Cubero, A.; Lorenz, K.; Wendler, E.; Magalhães, S.; Alves, E.; Carvalho, Daniel; Ben, T.; Morales, F. M.; Garcı́a, R.; Wetzel, Christian

doi:10.1088/0957-4484/26/42/425703

Cited by 6 publications

(8 citation statements)

References 26 publications

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“…Research and applications of ion beams encompass advanced electro-optical devices 9,11,12 , engineered nanostructures 2,3,13 , strain engineering [14][15][16] , nuclear materials [17][18][19] and space exploration 20,21 . In most cases, the desired goals are enabled by the energy transfer from the energetic particles to atomic nuclei and/or electrons of the target 22 .…”

Section: Introductionmentioning

confidence: 99%

Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism

Debelle

Crocombette

Boulle

et al. 2018

Phys. Rev. Materials

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Modification of materials using ion beams has become a widespread route to improve or design materials for advanced applications, from ion doping for microelectronic devices to emulation of nuclear reactor environments. Yet, despite decades of studies, major issues regarding ion/solid interactions are not solved, one of them being the lattice-strain development process in irradiated crystals. In this work, we address this question using a consistent approach that combines X-ray diffraction (XRD) measurements with both molecular dynamics (MD) and rate equation cluster dynamics (RECD) simulations. We investigate four distinct materials that differ notably in terms of crystalline structure and nature of the atomic bonding. We demonstrate that these materials exhibit a common behaviour with respect to the strain development process. In fact, a strain build-up followed by a strain relaxation is observed in the four investigated cases. The strain variation is unambiguously ascribed to a change in the defect configuration, as revealed by MD simulations. Strain development is due to the clustering of interstitial defects into dislocation loops, while the strain release is associated with the disappearance of these loops through their integration into a network of dislocation lines. RECD calculations of strain depth profiles, which are in agreement with experimental data, indicate that the driving force for the change in the defect nature is the defect clustering process. This study paves the way for quantitative predictions of the microstructure changes in irradiated materials.

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Section: Introductionmentioning

confidence: 99%

Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism

Debelle

Crocombette

Boulle

et al. 2018

Phys. Rev. Materials

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“…Ion implantation and in-situ Rutherford Backscattering Spectrometry in channeling mode (RBS/C) were carried out on sample RPI203 in the double-beam chamber at the University of Jena, Germany 18 . The implantations were performed at room temperature (RT) with 35 keV N + ions.…”

Section: Methodsmentioning

confidence: 99%

“…In this paper we will review our recent attempts in achieving QWI in InGaN/GaN MQW starting with a description of implantation damage build-up 18 followed by the discussion of the effects induced by annealing of the as-grown and implanted structures 19,20 . 23 .…”

Section: Introductionmentioning

confidence: 99%

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

Lorenz¹,

Redondo-Cubero²,

Lourenço³

et al. 2016

SPIE Proceedings

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Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 ºC resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 ºC results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures.

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“…In Fig. , RBS/C spectra are shown for an InGaN/GaN MQW on GaN after implantation with 35 keV N ions at room temperature to various ion fluences and quasi in situ RBS/C analysis . The MQW consists of five repeats of 3 nm In 0.1 Ga 0.9 N and 20 nm GaN.…”

Section: Group III Nitride Systemsmentioning

confidence: 99%

“…RBS/C spectra for the InGaN/GaN MQW after implantation of 35 keV N ions to different ion fluences given in cm −2 . The spectrum of the unimplanted sample and a random spectrum are included for comparison (lower and upper black line, respectively) . Analysis was done with 2.2 MeV He ions and a backscattering angle of 170°.…”

Section: Group III Nitride Systemsmentioning

confidence: 99%

Ion‐beam induced effects in multi‐layered semiconductor systems

Wendler

Соболев

Redondo-Cubero

et al. 2016

Physica Status Solidi (b)

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In this article, ion-beam induced effects in multi-layered III-V semiconductor structures are reviewed. Besides doping, important effects occurring during ion irradiation are defect formation and diffusion, amorphisation and intermixing. It is shown that these processes are closely related to each other. In layered systems consisting of group III-phosphides and -arsenides, which can be amorphised by ion implantation, cascade mixing is the dominant mixing mechanism at low temperatures. At a critical temperature, the crystalline structure is retained after implantation and the mixing efficiency may drop down because cascade mixing is more efficient in amorphous semiconductors than in their crystalline counterparts. A further increase of temperature results in an increase of the mixing efficiency due to thermally enhanced processes. Although much less experimental data exist on ion-beam induced effects in layered group III-nitride systems, the results suggest that these systems are not amorphised during ion implantation. In this case, the experimental results can be explained assuming recoil rather than cascade mixing to occur with the former being much weaker than the latter. A few applications of ion implantation of multi-layered semiconductor systems are addressed.

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Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

Cited by 6 publications

References 26 publications

Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism

Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

Ion‐beam induced effects in multi‐layered semiconductor systems

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