2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547)
DOI: 10.1109/smicnd.2001.967514
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Analysis of the subthreshold shift induced by the shallow trench isolation corner in advanced DRAM and flash memories

Mihai Tazlauanu1,
D. Scansen2,
K. Gibb3
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