Analysis of the Superior Water Blocking Ability of Electron Cyclotron Resonance‐Plasma SiO2 Film

Okuda, Shoji; Shioya, Yoshimi; Kashimada, Hideo

doi:10.1149/1.1838461

Cited by 13 publications

(9 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, the low dielectric constant ͑low-k͒ materials are also proposed for decreasing the parasitical capacitor for future integrated circuit ͑IC͒ applications. [3][4][5][6][7][8][9] One of the promising low-k dielectrics, a spin-on deposition hybrid organic siloxane polymer ͑HOSP͒ is a strong candidate. The HOSP is derivative of SiO 2 , in which one of the four oxygen atoms bonded to every silicon atom is replaced by hydrogen and methyl groups.…”

mentioning

confidence: 99%

Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process

Chang

Mor

Liu

et al. 2002

J. Electrochem. Soc.

View full text Add to dashboard Cite

The interaction between low dielectric constant ͑low-k͒ hybrid organic siloxane polymer ͑HOSP͒ and O 2 plasma ashing has been investigated. O 2 plasma ashing is commonly performed to remove the photoresist ͑PR͒ during integrated circuit fabrication. However, dielectric loss usually occurs in the HOSP films during the PR removal process. In order to eliminate dielectric loss originating from an O 2 plasma attack, hexamethyldisilazane ͑HMDS͒ treatment is proposed to repair the damage in the HOSP film. HMDS can react with Si-OH bonds and reduce moisture uptake. Moreover, the leakage current and the dielectric constant is decreased significantly when damaged HOSP film undergoes HMDS treatment. For this reason, HMDS treatment is a promising method to apply to the photoresist removal.As the device dimensions continue to shrink to 0.25 m and below, the interconnect delay becomes a limiting factor for increasing device speed. Since the RC delay is a product of the resistance in the metal interconnect ͑R͒ and the capacitance between the metal lines ͑C͒, incorporating new materials of low resistivity and low permittivity into interconnect fabrication can effectively reduce this time constant. 1,2 In order to decrease the resistance ͑R͒, copper has recently been introduced as an interconnect metal, due to its high electrical conductivity. In addition, the low dielectric constant ͑low-k͒ materials are also proposed for decreasing the parasitical capacitor for future integrated circuit ͑IC͒ applications. 3-9 One of the promising low-k dielectrics, a spin-on deposition hybrid organic siloxane polymer ͑HOSP͒ is a strong candidate. The HOSP is derivative of SiO 2 , in which one of the four oxygen atoms bonded to every silicon atom is replaced by hydrogen and methyl groups. In addition, the HOSP has a low dielectric constant of about 2.5 so that it has a high evaluation in ultralarge scale integration ͑ULSI͒ applications.However, photoresist stripping is an indispensable step in integration processing. The dielectric properties of the HOSP films will degrade after photoresist stripping. 10,11 As a result, hexamethyldisilazane ͑HMDS͒ treatment is proposed for improving the quality of the HOSP film after photoresist stripping. Furthermore, electrical measurements and material analyses have also been used to evaluate the HOSP film during the photoresist stripping process. ExperimentalThe wafers were coated with the HOSP solution at a rotation of 500 rpm for 5 s, and the sequential spin was at 2500 rpm for 20 s. After the spin-coating process, the HOSP films were baked on a hot plate at 150, 200, and 350°C for 1 min, respectively. Finally, the resulting wafers were further processed by furnace curing at 400°C under nitrogen ambient for 1 h.In this work, samples STD, A, and B were prepared. Sample STD was the as-cured HOSP film without any plasma treatment. Sample A was the HOSP film with O 2 plasma ashing for 1 min. Sample B was the O 2 plasma-treated HOSP film ͑sample A͒ after having undergone an HMDS atmosphere at 80°C for 15 min. ...

show abstract

mentioning

confidence: 99%

Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process

Chang

Mor

Liu

et al. 2002

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Okuda et al reported that the H atom of Si-H bond can be broken by OH-containing molecules. 12 Therefore, we hydrolyzed the sample in water to break the Si-H bond according to the following reaction:…”

Section: Resultsmentioning

confidence: 99%

Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

Guo

2002

J. Mater. Res.

View full text Add to dashboard Cite

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

show abstract

“…FT-IR spectroscopy was used to roughly study the content of H 2 O and the existence of Si-OH (3700 and 960 cm À1 ) and H-OH bonds (3400-3200 cm À1 ). [15][16][17] The FT-IR spectra of the film are shown in Figs. 7(a) and 7(b).…”

Section: H 2 O Contentmentioning

confidence: 99%

Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor

Shioya¹,

Shimoda²,

Maeda³

et al. 2005

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

We have developed low dielectric constant SiOCH films by plasma-enhanced chemical vapor deposition (PE-CVD) using hexamethyldisiloxane (HMDSO) containing a siloxane structure and water vapor (H2O) gases. Although the film was deposited using H2O vapor, the content of H2O is very small and the k value can be reduced to the order of 2.5. The leakage current is small and on the order of 10-9 to 10-10 A/cm2 at 1 MV/cm2. The hardness and Young's modulus are larger than 2 and 10 GPa, respectively at the k value of 2.8. However the values decrease abruptly with decreasing k value. The mechanism in which the structure and Young's modulus of PE-CVD low-k film decrease with changing k value and deposition conditions is discussed.

show abstract

Analysis of the Superior Water Blocking Ability of Electron Cyclotron Resonance‐Plasma SiO2 Film

Cited by 13 publications

References 4 publications

Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process

Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process

Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor

Contact Info

Product

Resources

About