Analysis of the Switching Variability in <inline-formula> <tex-math notation="TeX">$\hbox{Ni/HfO}_{2}$</tex-math></inline-formula>-Based RRAM Devices

Abstract

In this letter, we focus on the cycle-to-cycle variability of the low resistive state in Ni/HfO 2 -based resistive switching structures. The results show that several discrete current levels can individually last hundreds of cycles. They are a result of the random nature of the reversible conductive path formation through percolation processes, which could be attributed to a different shape, size, or number of conductive filaments. After successive cycles, the same or new filaments will nucleate in the weaker zones of the dielectric. In addition, the switching voltages related to the creation and dissolution of localized conductive paths are found to be statistically associated.Index Terms-Conductive filament (CF), HfO 2 , Ni, resistive random access memory (RRAM), unipolar switching, variability.

Experimental Time Evolution Study of the HfO2-Based IMPLY Gate Operation

“…Top electrodes of memristors are biased to specific voltage pulses (V P and V Q ). Regarding logic functionality, whereas in standard logic gates different voltage levels are related to the two binary states, in the case of the IMPLY gate, the binary states are associated to different memristor resistive states (or the current values for this resistance states [18]. These devices show better performance operating as negative unipolar RS devices [18], [19], i.e.…”

“…Characterization studies of the HfO 2 -based memristors have been performed in [7], [18] and [19]. In [18] and [19] the cycleto-cycle variability of I ON and I OFF is analyzed.…”

“…In [18] and [19] the cycleto-cycle variability of I ON and I OFF is analyzed. From the same works, a memristor endurance of thousands of cycles is also observed.…”

Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching based Memristors

“…In this paper we have focused on the modeling of memristive devices to characterize some of their main parameters. To do so, we have used devices fabricated and measured at the IMB-CNM (CSIC) in Barcelona [17]. The devices were based on Ni/HfO 2 /Si-n + structures fabricated on (100) n-type CZ silicon wafers.…”

“…The devices were based on Ni/HfO 2 /Si-n + structures fabricated on (100) n-type CZ silicon wafers. The resistive switching mechanisms of these devices were characterized and studied previously [11], [17].…”