Analysis of tunneling field‐effect transistor with germanium source junction using small‐signal equivalent circuit

Abstract

In this study, germanium is used as the source junction material in a tunneling field‐effect transistor (TFET) and the Ge‐source TFET is analyzed in the perspectives of high‐frequency performances. For analyses on the high‐frequency parameters, a small‐signal equivalent circuit with high credibility and device simulation are operated in cooperation. The errors in capacitances and transconductances, from both approaches, are within 10% up to the terahertz regime. It is found that the Ge‐source TFET has smaller gate‐to‐drain capacitance and tunneling resistance than Si‐source device. These features merit make Ge‐source TFET more suitable to wide variety of high‐speed and low‐power applications.

Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

“…TFET is essentially a reverse biased gated p-i-n diode [22][23][24]. Under negative ESD stress, ESD current is injected into the source terminal of TFET with drain terminal grounded.…”