Analysis of XBAR resonance and higher order spurious modes

Yandrapalli, Soumya; Plessky, V.P.; Koskela, J.; Yantchev, Ventsislav; Turner, Patrick; Villanueva, Luis Guillermo

doi:10.1109/ultsym.2019.8925993

Cited by 32 publications

(16 citation statements)

References 8 publications

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“…Recently, sc-LN LVRs utilizing the first-order asymmetric modes (A 1 ) have gained considerable attention due to its high acoustic velocity (>10,000 m/s) and large electromechanical coupling (>10%) [ 125 , 126 ]. It has been demonstrated that sc-LN LVRs operating in A 1 mode can achieve resonant frequency as high as 5 GHz with k eff 2 of 25% [ 127 , 128 ]. However, the reported Qs of sc-LN LVRs remain comparatively low relative to AlN LVRs.…”

Section: Discussionmentioning

confidence: 99%

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Lee

Zhang

2020

Sensors

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Over the last two decades, piezoelectric resonant sensors based on micro-electromechanical systems (MEMS) technologies have been extensively studied as such sensors offer several unique benefits, such as small form factor, high sensitivity, low noise performance and fabrication compatibility with mainstream integrated circuit technologies. One key challenge for piezoelectric MEMS resonant sensors is enhancing their quality factors (Qs) to improve the resolution of these resonant sensors. Apart from sensing applications, large values of Qs are also demanded when using piezoelectric MEMS resonators to build high-frequency oscillators and radio frequency (RF) filters due to the fact that high-Q MEMS resonators favor lowering close-to-carrier phase noise in oscillators and sharpening roll-off characteristics in RF filters. Pursuant to boosting Q, it is essential to elucidate the dominant dissipation mechanisms that set the Q of the resonator. Based upon these insights on dissipation, Q-enhancement strategies can then be designed to target and suppress the identified dominant losses. This paper provides a comprehensive review of the substantial progress that has been made during the last two decades for dissipation analysis methods and Q-enhancement strategies of piezoelectric MEMS laterally vibrating resonators.

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Section: Discussionmentioning

confidence: 99%

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Lee

Zhang

2020

Sensors

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“…Because the horizontal A1-3 harmonic is close to the right of anti-resonance, it may adversely affect the filter design. S. Yandrapalli et al [ 120 ] found that changing the value of pitch and mass loading of metal electrodes can not only tune the frequency, but also adjust the relative position of A1-3 mode and anti-resonance. Furthermore, it is observed that there is no A1-3 mode at metallization of 25%, but magnitude of S0 and A0 mode increases.…”

Section: Prospectsmentioning

confidence: 99%

“… ( a ) The structure of XBAR with crystalline z -axis perpendicular to the platelet surface; shear wave resonance (A1 Mode) by applying lateral electrical field parallel to the crystalline y -axis [ 120 ]. ( b ) Key characteristics of the XBAR resonator addressing 5G requirements [ 123 ].…”

Section: Figurementioning

confidence: 99%

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Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

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“…[10][11][12][13][14][15] But in order to achieve a high quality (Q) factor, the piezoelectric layer cannot be too thin and the fabrication techniques are elaborate, resulting in the limited frequency and high cost. Lamb wave devices which combine the strengths of SAW devices and BAW devices have been the hot area of research in recent years [16][17][18][19][20][21], but the process flow of fabrication is even more complicated than that of BAW devices. Aiming at lowering the cost, many researchers are committed to the study of high frequency SAW devices.…”

Section: Introductionmentioning

confidence: 99%

3D Layout of Interdigital Transducers for High Frequency Surface Acoustic Wave Devices

Shen

Luo

et al. 2020

IEEE Access

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The development of mobile communication sets higher demands on high frequency surface acoustic wave (SAW) devices. The layout of interdigital transducers (IDT) in SAW devices is in plane and the traditional methods of improving frequency for SAW devices are the increase of acoustic velocity and the reduction of wavelength. However, these methods have a limit due to the limited acoustic velocity and the photolithography limit. This work proposes a new way for the development of high frequency SAW devices by redesigning the layout of IDT in three dimensions (3D). The set of IDTs is split into two layers, i.e. the ground electrodes on one layer and the signal electrodes on the other layer. This 3D layout of IDTs dramatically narrows the horizontal gap between two adjacent electrodes, which can significantly increase the frequency. The frequency and the electromechanical coupling factor (K 2) of the four structures of SAW devices with the 3D layout of IDTs were studied by the finite element method (FEM). The results show that the frequency can be doubled under the same critical resolution of lithography due to the shortening of wavelength, and the 3D layout of IDTs is available for SAW devices based on piezoelectric thin film or piezoelectric single crystal. This work develops a new alternative to increase the working frequency of SAW devices.

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Analysis of XBAR resonance and higher order spurious modes

Cited by 32 publications

References 8 publications

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

3D Layout of Interdigital Transducers for High Frequency Surface Acoustic Wave Devices

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