Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

Dhiman, Gaurav; Pourush, Rajeev

doi:10.1109/iconc345789.2020.9117425

Cited by 4 publications

(4 citation statements)

References 14 publications

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“…As for n-JLSDGM device, decreasing the WF would contribute to lower V th , thus increasing the I ON . This is in agreement with the results reported by [21], [29], [35]. Based on the results, the highest recorded I ON is demonstrated by the n-JLSDGM device with WF=4.6 which is measured at approximately 1951 µA/µm.…”

Section: Electrostatic Performancessupporting

confidence: 92%

“…High-k/metal-gate (HKMG) stack technology is one the common approach to control the gate leakage current [18]- [20]. The HKMG integration offers an alternative option in minimizing the gate leakage without having to reduce the thickness of the insulator for same intrinsic capacitances [21]. Rezeli et al have stated that parameter dependencies should be carefully considered in HKMG based transistor due to inconsistent atom configuration at the surface material [15].…”

Section: Introductionmentioning

confidence: 99%

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Work function variations on electrostatic and RF performances of JLSDGM Device

Kaharudin

Salehuddin²,

Zain³

et al. 2021

IJEECS

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This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (ION), off-state current (IOFF), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (Pdyn), cut-off frequency (fT) and maximum oscillation frequency (fmax) are intensively investigated in conjunction with WF variations.

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Section: Electrostatic Performancessupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Work function variations on electrostatic and RF performances of JLSDGM Device

Kaharudin

Salehuddin²,

Zain³

et al. 2021

IJEECS

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“…22 Junctionless Gate all around FET are the most promising contender because of their resistance to short-channel effects (SCEs) and the random dopant profile effect. 23,24 The Junctionless FET device architecture eliminates the need for metallurgical junctions, thereby eliminating the ultra-steep doping profile required between the source/drain and channel regions, along with the complex thermal budget requirements associated with it. 25 But, Junctionless FETs face challenges including high source-drain resistance, lower mobility, and band-to-band tunnelling 26 in the OFF state.…”

mentioning

confidence: 99%

“…34,35 When making small-scale devices, the silicon dioxide (SiO 2 ) gate insulator should be replaced with a high-k dielectric gate oxide material, such as hafnium oxide, while maintaining appropriate z E-mail: shivaniyadav.ece@gmail.com; rewarisonam@gmail.com ECS Journal of Solid State Science and Technology, 2023 12 127008 oxide thickness (EOT) as a constant. 23 Hetero Dielectric structure in which combinations of low dielectric material together with high dielectric materials are utilised for FETs have been reported in literature to boost ON current 36 and reduce the OFF state leakages. 37,38 Nanometer sized biomolecules are detectable using Gate All Around Field Effect Transistor (GAAFET) based sensors.…”

mentioning

confidence: 99%

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Yadav,

Rewari

2023

ECS J. Solid State Sci. Technol.

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The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure’s metal gate is trenched into the Hafnium oxide dielectric layer, which provides the gate with enhanced control over the surface characteristics of the channel. A Trench Gate architecture in a hetero dielectric Gate All Around FET is emulated for the biosensing for the first time. The HDTG-JAM-GAAFET has been compared to Normal Gate JAM Gate-All-Around FET (NG-JAM-GAAFET) biosensors immobilizing a variety of neutral biomolecules and biomolecules having a range of positive and negative charges. The effect of biomolecules on HDTG-JAM-GAAFET biosensor’s output properties, including surface potential, electron concentration, threshold voltage drift (ΔVTH), subthreshold leakage current (IOFF), subthreshold slope (SS), switching ratio (ION/IOFF), ION current sensitivity, transconductance (gm), output conductance (gd), channel resistance (Rch) and intrinsic gain ( A V int ) has been studied. For instance, HDTG-JAM-GAAFET biosensor has drain ON-current sensitivity ( S I ON ) which is 67.68% greater for gelatin biomolecules, 69.4% higher for positive biomolecules, and 8% higher for negative biomolecules bound in the nanogap cavity than that of a Normal Gate JAM Gate-All-Around FET. The proposed device exhibits exceptional performance characteristics and it can effectively identify specific biomolecules to diagnose many diseases, such as breast cancer, lung cancer, and numerous viral infections, using their respective biomarkers.

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