Analytic and explicit current model of undoped double-gate MOSFETs

Zhu, Zhengming; Zhou, Xing; Rustagi, S.C.; See, Guan Huei; Lin, S. H.; Zhu, Guojun; Wei, Chengqing; Zhang, J.

doi:10.1049/el:20072682

Cited by 6 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In (9), let us denote the (1 + β 1 tan β 1 )/β 1 term by t 12 . If this term t 12 is multiplied by 1 − ((tan β 1 − β 1 )/(2 + β 1 tan β 1 ) tan β 1 ), then the analytics becomes simpler.…”

Section: Approximationsmentioning

confidence: 99%

“…In [3], [4] charge sheet models were used, whereas in [4]- [12], and [28], a constant mobility was assumed. References [3] and [13] considered velocity saturation effects by using the Caughey-Thomas model [17] or its variants with exponent n = 1 (the variants (e.g., [14]) differing in the way the critical electric field E c relates to v sat , but all of them, nevertheless, using an exponent n = 1).…”

mentioning

confidence: 99%

See 1 more Smart Citation

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Hariharan

Vasi

Rao

2008

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Section: Approximationsmentioning

confidence: 99%

mentioning

confidence: 99%

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Hariharan

Vasi

Rao

2008

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

“…Modeling of DG MOSFET is different from the conventional MOSFET modeling owing to two conductinginterface couplings and volume inversion (Ortiz-Conde et al, 2003a, 2003bNandi et al, 2017). Several potential models for the DG MOSFET have been proposed in the literature (Ortiz-Conde et al, 2003a, 2003bGarcia-Sanchez et al, 2006;Zhu et al, 2007;Zhou et al, 2008;Dutta et al, 2011). Researchers have solved the 1-D Poisson equation to derive analytical expressions for the channel potential, threshold voltage and current (Lo et al, 2007;Shih and Wang, 2009).…”

mentioning

confidence: 99%

Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach

Singh

2019

COMPEL

View full text Add to dashboard Cite

Purpose This study aims to develop a compact analytical models for undoped symmetric double-gate MOSFET based on carrier approach. Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects, ideal subthreshold slope and free dopant-associated fluctuation effects. DG MOSFET is of two types: the symmetric DG MOSFET with two gates of identical work functions and asymmetric DG MOSFET with two gates of different work functions. To fully exploit the benefits of DG MOSFETs, the body of DG MOSFETs is usually undoped because the undoped body greatly reduces source and drain junction capacitances, which enhances the switching speed. Highly accurate and compact models, which are at the same time computationally efficient, are required for proper modeling of DG MOSFETs. Design/methodology/approach This paper presents a carrier-based approach to develop a compact analytical model for the channel potential, threshold voltage and drain current of a long channel undoped symmetric DG MOSFETs. The formulation starts from a solution of the 2-D Poisson’s equation in which mobile charge term has been included. The 2-D Poisson’s equation in rectangular coordinate system has been solved by splitting the total potential into long-channel (1-D Poisson’s equation) and short-channel components (remnant 2-D differential equation) in accordance to the device physics. The analytical model of the channel potential has been derived using Boltzmann’s statistics and carrier-based approach. Findings It is shown that the metal gate suppresses the center potential more than the poly gate. The threshold voltage increases with increasing metal work function. The results of the proposed models have been validated against the Technology Computer Aided Design simulation results with close agreement. Originality/value Compact Analytical models for undoped symmetric double gate MOSFETs.

show abstract

Investigating Effect of Structural Parameters on Static Characteristics of Ultrathin DG MOSFET Using Taur’s Model

Chakraborty¹,

Mondal²,

Deyasi³

2019

Lecture Notes in Networks and Systems

View full text Add to dashboard Cite

Analytic and explicit current model of undoped double-gate MOSFETs

Cited by 6 publications

References 3 publications

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach

Investigating Effect of Structural Parameters on Static Characteristics of Ultrathin DG MOSFET Using Taur’s Model

Contact Info

Product

Resources

About