Analytic Large-Signal Modeling of Silicon RF Power MOSFETs

Comparative Analysis of VDMOS/LDMOS Power Transistors for RF Amplifiers

“…The source impedance calculated using (20) is located on the load cycle, which is about 0.2 dB from the optimal impedance . On the other hand, the previous expression [10] gives a source impedance located on a cycle that is about 0.7 dB from . Similarly, the load impedance is calculated with more accuracy when the new expression is used: whereas the impedance calculated using [10] is located on the cycle that is 0.5 dB from the optimal impedance , the new expression gives an impedance located closer than the optimal value (about 0.05 dB).…”

“…On the other hand, the previous expression [10] gives a source impedance located on a cycle that is about 0.7 dB from . Similarly, the load impedance is calculated with more accuracy when the new expression is used: whereas the impedance calculated using [10] is located on the cycle that is 0.5 dB from the optimal impedance , the new expression gives an impedance located closer than the optimal value (about 0.05 dB). It is noticed that the imaginary value of the matching impedances is improved compared to previous expressions in [10].…”

“…Proceeding as in [10], the optimum load impedance is determined by forcing the current generator to see a real output impedance , the load-line resistance, associated with the maximum voltage and current swings [12]. The optimum source impedance is determined as the conjugate match of the transistor's input impedance.…”

“…The vertical device is biased at V mA . Matching impedances and PG are compared using our earlier expressions [10] with those presented here with source/load-pull simulations (Figs. 4 and 5).…”

“…4 and 5). PG and gain compression are calculated and presented in Table IV. corresponds to the PG calculated using the analytical expressions from [10] and this study. and correspond, respectively, to the simulated PG and the simulated 1-dB compression point when matching impedances are determined via source/load-pull simulations in ADS, equations from [10] and (20) and (21).…”