Abstract-A comparison between the RF performance of vertical and lateral power MOSFETs is presented. The role of each parasitic parameter in the assessment of the power gain, 1-dB compression point, efficiency, stability, and output matching is evaluated quantitatively using new analytical expressions derived from a ten-element model. This study reveals that the contribution of the parasitic parameter on degradation of performance depends upon the specific technology and generic perceptions of source inductance and feedback capacitance in VDMOS degradation may not always hold. This conclusion is supported by a detailed analysis of three devices of the same power rating from three different commercial vendors. A methodology for optimizing a device technology, specifically for RF performance and power amplifier performance is demonstrated. IndexTerms-Efficiency, lateral diffused MOSFET (LDMOSFET), power gain (PG), stability factor, vertical diffused MOSFET (VDMOSFET).

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The Radio Frequency Power Amplifier lies at the heart of all modern day communication systems ranging from the cellular infrastructure market to broadcast, radar, medical, automotive and military to name a few. Transmission systems not only require substantial power at high frequencies, but they are also one of the most demanding of semiconductor applications on account of their requirements for efficiency and linearity, which inherently introduces a tradeoff during design. Three types of device technologies have been in typical use for RF power amplification: the VDMOS (at frequencies upto 1 GHz), the LDMOS (at frequencies upto 3.5 GHz), and more recently the Gallium Nitride HEMT, which extends the frequency range upto 5-7 GHz. As an emerging technology, GaN has huge potential, but its widespread use is still currently limited by the level of experience, absence of reliable device models and prices which are roughly (6-10 times that of silicon). This overview highlights the distinct features of the RF Power devices and touches upon the performance metrics of the above technologies (in silicon and GaN).Radio Frequency Power Amplifier, VDMOS, LDMOS, GaN HEMT.

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