Analytical and numerical modeling of amorphous silicon p-i-n solar cells

Abstract

Analytical and equivalent-circuit models based on numerical solutions for a-Si:H solar cells are presented. The dependencies among such variables as recombination rate and electrical field on terminal and optical excitation are discussed. Based on our physical interpretation of the numerical solutions, we propose an equivalent-circuit model which separates the currents into photocollected and back injected components. This model clarifies the concept of the limiting carrier and points out that the limiting carrier is the carrier with the least photocollected current. Analytical expressions for uniformly and strongly absorbed light are derived.

The influence of defects on short circuit current density in p-i-n silicon solar cell

“…The important parameters of p-i-n a-Si:H solar cell are calculated by applying admittance analysis method as a function of i-layer thickness with selected defect density, it differs from Hack and Shur [7] method in that it depends on SRH model [8].…”

“…Instead of assuming a constant generation rate of charge carriers through the ilayer as used by Hack and Shur [7,8], it is considered that the generation rate depends on the position within the i-layer. 2.…”

Analysis of the Ideality Factor of a-Si:H Solar Cells

“…The authors of Refs. [3,4] use a homogenous photogeneration rate G that is independent from the wavelength X, resulting in an inaccurate representation of amorphous siliconbased films due to the large absorption coefficient a{\) of these films in the blue region of the solar spectrum.…”

The Tail States as Sensitizing Recombination Centers for Holes Lifetime in a-Si:H

“…On the other hand, relatively little is known about the tail states effect on the holes lifetime. The latter question is not only of a scientific but also of a technological importance, since the minority carriers are dominant in determining the performance of bipolar devices such as solar cells [5].…”