Simulation of Semiconductor Devices and Processes 1995
DOI: 10.1007/978-3-7091-6619-2_118
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Analytical Model for Phosphorus Large Angle Tilted Implantation

A. Burenkov
1
,
W. Bohmayr
2
,
J. Lorenz
3
et al.
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Cited by 2 publications
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3D Simulation of Topography and Doping Processes at FhG

Lorenz
1
,
Bär
2
,
Burenkov
3
et al. 1995
3-Dimensional Process Simulation
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3D Simulation of Topography and Doping Processes at FhG

Lorenz
1
,
Bär
2
,
Burenkov
3
et al. 1995
3-Dimensional Process Simulation
Self Cite
4
0
0
0
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Three-dimensional simulation of ion implantation

Lorenz
1
,
Tietzel
2
,
Bourenkov
3
et al. 1996
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)
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