Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

Kumar, Sachin; Agrawal, Ajay; Chaujar, Rishu; Gupta, Mridula; Gupta, R. S.

doi:10.1016/j.spmi.2008.01.023

Cited by 36 publications

(23 citation statements)

References 21 publications

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“…Various models are available for AlGaN/GaN HEMT devices based on numerical calculations, semiempirical model, simplifying approximations [9][10][11] and device physics [12][13][14][15][16][17][18], but mathematical model for AlGaN/GaN HEMTs with gate dielectric has not yet been developed. However, Shenghui et al [19] proposed an analytical charge control model for AlGaN/GaN MIS-HEMTs including undepleted barrier layer, which successfully modelled transfer characteristics.…”

Section: Introductionmentioning

confidence: 99%

A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

2015

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In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.

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Section: Introductionmentioning

confidence: 99%

A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

2015

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“…Various structures like double gate HEMT, split gate HEMT etc. were proposed , but none can solve the problems of short channel effect and carrier transport inefficiency simultaneously [8]. The ultimate solution was given by Long et al [9] in his proposed Dual Material Gate (DMG) FET structure.…”

Section: Introductionmentioning

confidence: 99%

“…But as the scaling goes into deep sub-micron level, need for an analytical model of subthreshold behavior of DMG HEMT emerges. S.P.Kumar et al [8] first proposed an analytical model for the subthreshold behavior of nitridebased DMG HEMT. In one of our previous paper [10] the model of [8] was modified and an analytical model for antimonide-based HEMTs was developed.…”

Section: Introductionmentioning

confidence: 99%

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Effects of physical parameters on subthreshold characteristics of nitride and antimonide-based double material gate (DMG) HEMTs

Rashid

Hossain

Rahman

et al. 2014

8th International Conference on Electrical and Computer Engineering

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In this papar we have varied the physical parameters of double material gate (DMG) HEMT and noted the change in subthreshold characteristics. The physical parameters are: control-gate length, barrier layer thickness and the workfunction difference between two gate materials. A semi-classical analytical model has been used to determine the channel potential and electric field. One nitride-based and three antimonide-based formations have been used in this work and their results have been compared. We have found that nitride-based DMG HEMTs are less sensitive to process variation of gate fabrication compared to antimonide-based DMG HEMTs. It has been seen that variation in barrier layer thickness affects nitride-based HEMTs more strongly than antimonide-based DMG HEMTs, while the effect of change in workfunction difference is more prominent in antimonide-based HEMTs. Among the antimonidebased HEMTs, it have been seen that the formation with deep conduction band discontinuity is more susceptible to change in control-gate length than formations with shallow conduction band discontinuity. But effects of barrier layer thickness change and change in workfunction difference are more noticeable in shallow conduction band formations, making these formations more effective as double material gate (DMG) structures.Index Terms-HEMT, antimonide-based, nitride-based, physical parameters.

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“…The analytical modeling was then developed for it helps to provide more transparent explanation on the basis of internal physical mechanism [3][4][5][6][7][8][9][10][11][12]. The advantages of enhanced performances in DMG structure, lies on the adjustable surface potential, electrical field and carrier velocity profiles observed along the channel, as DMG properties are manipulated [3][4][5][6][7][8][9][10][11]. In this work, the linearity properties of Dual Material Gate Fully Depleted Silicon On Insulator (DMG-FD-SOI) will be investigated in relation with the standard SOI devices, under several parameters evaluation including gate length ratio (L 1 :L 2 ) and gate workfunction difference (ΔФM), silicon thickness (T Si ) and threshold voltage (V TH ) setting.…”

Section: Introductionmentioning

confidence: 99%

Dual Material Gate Silicon on Insulator (DMGSOI) - Design impact on linearity

Jafar

Soin

2009

2009 5th International Colloquium on Signal Processing &Amp; Its Applications

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This paper presents the impact of implementing Dual Material Gate (DMG) onto a fully depleted Silicon On Insulator (SOI) device on linearity performance as compare to the standard Single Material Gate (SMG) SOI device. Linearity study performed takes into account the influences of DMG properties namely gate length ratio (L 1 :L 2 ) and gate workfunction difference (ΔФM), silicon thickness (T Si ) and threshold voltage (V TH ) setting simulated using ATLAS 2D. Analysis focus on gate bias condition which determine the saturation level, relevant for obtaining minimal linearity degradation. Based on results obtained, DMG device consistently show better linearity performance than its SMG counterparts with further improvement by applying higher ΔФM and T Si .Index terms -DMG-FD-SOI, SMG-FD-SOI, linearity, gate length ratio (L 1 :L 2 ), gate material workfunction difference (ΔФM), silicon thickness (T Si ) and threshold voltage (V TH )

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Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

Cited by 36 publications

References 21 publications

A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

Effects of physical parameters on subthreshold characteristics of nitride and antimonide-based double material gate (DMG) HEMTs

Dual Material Gate Silicon on Insulator (DMGSOI) - Design impact on linearity

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