Analytical modeling and simulation of advanced silicon nanowire transistors

Samuel, T. S. Arun; Pandian, M. Karthigai; Shenbagavalli, A.; Arumugam, A.

doi:10.56053/2.3.151

Cited by 5 publications

(9 citation statements)

References 2 publications

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“…Figureure 3 depicts the variation of the average Nusselt number as a function of the modified Rayleigh number in the case of an inclined channel (Ar= H/b=30 and =30 o ). As can be seen, our results are in perfect agreement with the correlations proposed by Mittelman et al [20].…”

Section: Validation Of the Modelsupporting

confidence: 93%

“…It is clear that the values of the average Nusselt number obtained numerically in the present work are in better agreement with the correlation given in [28]. The second validation test uses the numerical results presented by Mittelman et al [20] relating to the passive cooling of inclined photovoltaic panels. Figureure 3 depicts the variation of the average Nusselt number as a function of the modified Rayleigh number in the case of an inclined channel (Ar= H/b=30 and =30 o ).…”

Section: Validation Of the Modelsupporting

confidence: 81%

“…The above open boundary conditions (Eqs. [16][17][18][19][20] are identical to those proposed in [17,18,22].…”

Section: Problem Descriptionmentioning

confidence: 95%

“…Natural convection in an inclined channel heated asymmetrically, can model this configureuration. In the past, numerous experimental and numerical studies have been carried out to understand the effect of inclination on the thermal performance of inclined channels [15][16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

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Natural convection in inclined channel for air cooling of photovoltaic panels

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Kennich

Balti

et al. 2019

ETN

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Reducing the operating temperature of a photovoltaic (PV) module is an effective way to improve efficiency and prevent damage from overheating. The present paper focuses on the study of the effect of inclination on air natural convection in an asymmetrically heated channel (at uniform heat flux), in laminar regime. This configureuration models the passive and natural air-cooling of PV panels by inclined chimneys. The computational procedure solves the unsteady two-dimensional Navier-Stokes and energy equations by a finite volume approach while the projection method decouples the pressure from the velocity. The heat transfer and fluid flow are analyzed for a wide range of modified Rayleigh numbers varying from 102 to 105 and for inclination angles between 15o and 90o with respect to horizontal position. The results show that the mass flow rate and the average Nusselt number increase with the angle of inclination as well as with the modified Rayleigh number. However, a significant reduction in heat transfer rate and induced flow rate is observed for the low angles of inclination. To enhance the cooling of the PV panel, extensions are added at the inlet and outlet of the channel. The simulations show that only the downstream extensions of the channel are effective in improving the induced mass flow rate and therefore the convective heat transfer.

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Section: Validation Of the Modelsupporting

confidence: 93%

Section: Validation Of the Modelsupporting

confidence: 81%

“…The above open boundary conditions (Eqs. [16][17][18][19][20] are identical to those proposed in [17,18,22].…”

Section: Problem Descriptionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Natural convection in inclined channel for air cooling of photovoltaic panels

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Kennich

Balti

et al. 2019

ETN

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“…where A is the contact area, A* is the effective Richardson constant (by using an effective mass of 0.22 m e for n-GaN [12,13], the calculated value of A* is 26.4 A cm −2 K −2 ) and  b is the barrier height.…”

Section: Figurementioning

confidence: 99%

Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate

Mazari¹,

Ameur²,

Boumesjed³

et al. 2020

ETN

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The current–voltage (I–V) characteristics of Schottky diodes on free-standing GaN substrate are investigated by using electrical characterization and analytical modelling calculation. We have calculated the electrical parameters from experimental current-voltage curve by two methods: ln(I) and Cheung. So, we calculated different electrical parameters using experimental I-V curve such as saturation current, ideality factor, series resistance and barrier height. We have found from the first method, the ideality factor n (1.02), the barrier height fb (0.65 eV) and a series resistance Rs (84 Ω). From the second method, we have found, n (1.09), fb (0.79 eV) and Rs (79.58 Ω - 79.73 Ω). Using analytical approach, we plotted the theoretical curves for comparison with the experimental characteristic and also to determine the dominant current transport mechanism. The results found support an assumption that the dominant current mechanism in Au/n-GaN (free-standing substrate) Schottky diode is the thermionic current.

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Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Paramasivam,

Gowthaman,

Srivastava

2024

Silicon

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In the realm of electronics, the performance of Silicon Trigate Rectangular Nanowires (Si-TRNW) and the structural characteristics of <001> orientation using tight-binding models have been analyzed. The fast algorithm based on the tight-binding model for Trigate Silicon nanowires yielded a remarkable ION/IOFF ratio of 1.49 × 1010 and leakage current (ILeak or IOFF) of 3.7 × 10−17μA. Furthermore, a maximum conduction band energy level (Ecmax) of −0.003 eV and a Subthreshold Slope (SS) of 120 mV has been obtained for a channel length of 15 nm. At an energy level of 3 eV, a high Transmission coefficient, T(ε), of 4 has been attained using the E-k dispersion method. This analysis also involved the calculation of three ∆ valleys pertinent to the channel’s effectiveness in <001> orientation, with proximity nearer to 1 m0. The Schrodinger-Poisson equation has been analyzed with the Ballistic transport along the [001] z-direction in channel potential. A comparative assessment has been also performed between the lateral dimensions of rectangular nanowires with equal energy levels, utilizing both the tight-binding model and Density Functional Theory (DFT) techniques. In some high-frequency applications, a high transmission coefficient is beneficial to maximize the amount of energy or information that gets transmitted. Reducing leakage current would offer a technological pathway for performance improvement of high-frequency applications. The high ON-current (ION) has been obtained through the DFT approach between source and drain terminals is particularly desirable for applications demanding for fast switching speeds and high-performance computing. The strengths of both methods in hybrid approaches is a common strategy to achieve simulations that are both accurate and efficient. Notably, the nanowires subjected to hydrostatic strain, exhibiting enhanced mobility and exceptional electrostatic integrity, emerged as pivotal components for forthcoming technology nodes. This research augments the potential feasibility of strain-based Si nanowires, even at the 3 nm scale, in subsequent technological advancements.

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Analytical modeling and simulation of advanced silicon nanowire transistors

Cited by 5 publications

References 2 publications

Natural convection in inclined channel for air cooling of photovoltaic panels

Natural convection in inclined channel for air cooling of photovoltaic panels

Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

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