Analytical modeling of quantization effects in surrounding-gate MOSFETs

Vimala, P.; Balamurugan, N. B.

doi:10.1108/compel-03-2013-0101

Cited by 10 publications

(5 citation statements)

References 14 publications

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“…The analytical expression for surface potential in the silicon film is obtained by rigorously solving Poisson's equation [20] and is given by, ( )…”

Section: Surface Potential Modelmentioning

confidence: 99%

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

Vimala

Kumar

2020

JNanoR

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The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

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“…The analytical expression for surface potential in the silicon film is obtained by rigorously solving Poisson's equation [20] and is given by, ( )…”

Section: Surface Potential Modelmentioning

confidence: 99%

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

Vimala

Kumar

2020

JNanoR

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“…However, it has been widely confirmed that, the performances of these components are prone to be affected by parasitic parameters such as inter-electrode capacitance and resistance (Allagui et al , 2021), and prone to be affected by parameter drift phenomenon, which is in direct contact with some dynamic characteristics of MOSFETs (Chen et al , 2020; Mukunoki et al , 2018a, 2018b), Miller plateau and oscillations at the turn on/off moments, to name a few. Therefore, a reasonable and accurate model has a pivotal role in the performance analysis of both MOSFETs and circuit systems with such components (Palanichamy and Balamurugan, 2014; Mayilsamy et al , 2021; Hsu et al , 2020).…”

Section: Introductionmentioning

confidence: 99%

A fractional-order equivalent model for characterizing the interelectrode capacitance of MOSFETs

Huang

Chen

2022

COMPEL

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Purpose This paper aims to characterize the relationship between the interelectrode capacitance (C) of metal-oxide-semiconductor field-effect transistors (MOSFETs) and the applied bias voltage (V) by a fractional-order equivalent model. Design/methodology/approach A Riemann–Liouville-type fractional-order equivalent model is proposed for the C–V characteristic of MOSFETs, which is based on the mathematical relationship between fractional calculus and the semiconductor physical model for the interelectrode capacitance of metal oxide semiconductor structure. The C–V characteristic data of an N-channel MOSFET are obtained by Silvaco TCAD simulation. A differential evolution-based offline scheme is exploited for the parameter identification of the proposed model. Findings According to the results of theoretical analysis, mathematical derivation, simulation and comparison, this paper illustrates that, along with the variation of bias voltage applied, the interelectrode capacitance (C) of MOSFETs performs a fractional-order characteristic. Originality/value This work uncovers the fractional-order characteristic of MOSFETs’ interelectrode capacitance. By the proposed model, the influence of doping concentration on the gate leakage parasitic capacitance of MOSFETs can be revealed. In the pre-defined doping concentration range, the relative error of the proposed model is less than 5% for the description of C–V characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). Compared to some existing models, the proposed model has advantages in both model accuracy and model complexity, and the variation of model parameters can directly reflect the relationship between the characteristics of MOSFETs and the doping concentration of materials. Accordingly, the proposed model can be used for the microcosmic mechanism analysis of MOSFETs. The results of the analysis produce evidence for the widespread existence of fractional-order characteristics in the physical world.

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“…Reducing the channel length eventually gave rise to numerous limitations called shortchannel effects and decaying parasitic effects [2]. In the recent times, we have faced a problem called latch-up; this is a drawback of the CMOS technology used for manufacturing conventional MOSFETs [3]. A new fabrication process named SOI technology which reduces latch-up by creating a physical barrier between p-n-p-n junction, reducing parasitic effects.…”

Section: Introductionmentioning

confidence: 99%

Study of a New Device Structure: Graphene Field Effect Transistor (GFET)

Vimala¹,

Bassapuri²,

Harshavardhan³

et al. 2021

J. Nano- Electron. Phys.

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The aim of this paper is to improve the performance of nanodevices yielding the overall gain of electronic applications. The performance in low-power consumption, high sensitivity and faster switching speeds are prerequisites for the modern era of electronics. The proposed paper defines the 3D structure of a Graphene Field Effect Transistor (GFET). The titled structure is in an evolutionary phase and is being researched day by day. The prime advantages of the device for its overall performance and specific applications have made a detailed study interesting. The structure of graphene provides exceptional capabilities for its operation and hence an excellent solution for sensing applications. Graphene is placed between the source and drain junctions, forming a bridge and providing a path for electron movement. The nanodevice is simulated for electrical parameters such as drain current, drain voltage, Dirac voltage, mobility, electron density, hole density, temperature. The device is modelled using the NanoHUB simulation tool. The behavior of drain current with varying channel length and gate voltages is proposed. The improved characteristics of the device with decreasing channel length, gate voltage and Dirac point shift are observed. The Dirac point plays a vital role in the conduction mechanism of graphene and hence GFET. The Dirac point was studied for the given simulation parameters, and the Dirac point shift was observed, leading to a change in conduction. The variation of drain current was simulated for different drain voltages, which provides us sufficient evidence of efficiency and hence low-power consumption. The distribution of carriers and various operating temperatures along the channel is presented for a varying gate voltage. The results show the outperformance of GFET for present day needs in sensing applications.

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Analytical modeling of quantization effects in surrounding-gate MOSFETs

Cited by 10 publications

References 14 publications

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

A fractional-order equivalent model for characterizing the interelectrode capacitance of MOSFETs

Study of a New Device Structure: Graphene Field Effect Transistor (GFET)

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