Analytical, Numerical-, and Measurement–Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)

An effective method of improving signal integrity of throughsilicon-via (TSV) is proposed by adding a PN junction around conventional TSV. And the equivalent electrical model of the TSV with PN junction is proposed, based on which the S-parameters are obtained by ADS software and compared those of conventional TSV. It is shown that the TSV with PN junction offers more superior signal integrity than conventional TSV. Meanwhile, the S-parameters are validated by employing HFSS, and the results from ADS and HFSS show well agreements. Finally, a feasible fabrication process is given.

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“…The resistance of TSV, including the skin and proximity effects of high speed circuits, is given by [10] …”

Section: Methodsmentioning

confidence: 99%

A novel guard method of through-silicon-via (TSV)

Wang

Huang

2018

IEICE Electron. Express

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“…Single‐ended TSVs include one TSV as the signal wire and the other as its return path. Because of simpler structures and lower insertion losses with less number of signal TSVs, various single‐ended TSV configurations have been investigated for high performance and wide applications …”

Section: The Mmw Electrical Models Of Tsvsmentioning

confidence: 99%

“…Because of simpler structures and lower insertion losses with less number of signal TSVs, various single-ended TSV configurations have been investigated for high performance and wide applications. [6][7][8][9] The equivalent-circuit model and the full-wave extraction method for the resistance-inductance-capacitanceconductance (RLCG) parameters of Cu-based signal-ground (GS) TSV pair were first proposed due to their simple structure, as shown by Figure 3. [6][7][8][9] The proposed model in 8 included not only the TSV, but also the bump and redistribution layer (RDL) that were additional components for 3D IC design.…”

Section: Single-ended Tsv Structuresmentioning

confidence: 99%

“…The through‐silicon vias (TSVs) are short vertical interconnections that carry a variety of signals (power, clock, and data) between different layers within three‐dimensional integrated circuits (3D ICs), which can significantly shorten the interconnect length between circuit blocks and thereby reduces the time delay and power consumption . Correspondingly, the TSV‐based 3D ICs provide opportunities for the reduction of dimensions and power consumption, which is an exciting technology due to the smaller form factor, improved global signaling, and ability to integrate heterogeneous circuits within a single platform.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the electrical characteristics of TSVs are critical to the performance of mmW 3D ICs due to the abundant utilization of TSVs. Therefore, many studies have been carried out for modeling of TSV interconnects together with their fabrication technologies . What is more, TSVs exploiting new structures and materials were also researched to enhance the performance of 3D ICs …”

Section: Introductionmentioning

confidence: 99%

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Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

Liu

Zhu

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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As the short vertical interconnections can significantly shorten the interconnect length between different circuits, three‐dimensional integrated circuits (3D ICs) based on the through‐silicon via (TSV) technology are considered as one of the most promising alternatives to overcome the scaling limits of Moore's low. Moreover, as the silicon technologies have been progressively expanded into the millimeter‐wave (mmW) realm, the TSV technology also provides a promising option to realize a compact system with high performance and operating frequencies. This article provides an overview of recent advances in the development of TSV technologies and silicon‐based passive devices for mmW applications. As various kinds of TSV losses are detrimental to the electrical performance of 3D ICs, especially in mmW systems, TSVs exploiting novel structures and materials still needs much more research, making it possible to integrate the passive device on 3D ICs and providing a promising option to realize a compact mmW system with excellent electrical performance and system reliability.

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Interconnection Technology Innovations in 2.5D Integrated Electronic Systems

Thadesar

Bakir

2019

Advances in Embedded and Fan‐Out Wafer‐Level Packaging Technologies

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Analytical, Numerical-, and Measurement–Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)

Cited by 74 publications

References 27 publications

A novel guard method of through-silicon-via (TSV)

A novel guard method of through-silicon-via (TSV)

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

Interconnection Technology Innovations in 2.5D Integrated Electronic Systems

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