Analytical prediction of subsurface microcrack damage depth in diamond wire sawing silicon crystal

Wang, Liyuan; Gao, Yufei; Li, Xinying; Pu, Tianzhao; Yin, Youkang

doi:10.1016/j.mssp.2020.105015

Cited by 44 publications

(8 citation statements)

References 35 publications

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“…The edge damage size of the groove during the scratching process, s, is approximately equal to the median crack depth. It can be expressed as [34]…”

Section: Scratch Of Brittle Materialsmentioning

confidence: 99%

Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales

Chai

et al. 2020

Applied Sciences

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In this paper, a series of indentation tests in which the maximum normal force ranged from 0.4 to 3.3 N were carried out to determine the fracture toughness of 4H-SiC single crystals. The results indicated that an appropriate ratio of the distance from the indentation center to the radial crack tip to the distance from the indentation center to the indentation corner is significant to calculate fracture toughness of 4H-SiC single crystals. The critical condition with no cracks on the edge of the indentation was obtained through a fitting method. The surface morphologies of the groove were analyzed by scanning electron microscopy (SEM). Plastic deformation was observed and characterized by the smooth groove without cracks and ductile chips on the edge of the groove in the initial stages of scratch. With increased normal force, median cracks, radial cracks, and microcracks appeared in turn, followed by the crack system no longer being able to stably extend, causing the brittle fracture to dominate the material removal. The size of the edge damages were measured through SEM and the experimental data highly agreed with the predicted curve. A modified calculation model considering elastic recovery of the sample by the indenter during the scratching process was suggested. These results prove that elastic recovery of 4H-SiC single crystals cannot be ignored during ultra-precision machining.

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“…The edge damage size of the groove during the scratching process, s, is approximately equal to the median crack depth. It can be expressed as [34]…”

Section: Scratch Of Brittle Materialsmentioning

confidence: 99%

Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales

Chai

et al. 2020

Applied Sciences

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“…Many recent approaches to modelling the workpiece surface quality in diamond wire sawing and grinding processes in general are based on the interaction between the workpiece and individual grains [34][35][36]. With improved methods and increasing computation power, larger surfaces can be simulated and improvement of the prediction requires the consideration of wear.…”

Section: Resultsmentioning

confidence: 99%

Grain flash temperatures in diamond wire sawing of silicon

Pala

Süssmaier

Wegener

2021

Int J Adv Manuf Technol

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Diamond wire sawing has obtained 90% of the single-crystal silicon–based photovoltaic market, mainly for its high production efficiency, high wafer quality, and low tool wear. The diamond wire wear is strongly influenced by the temperatures in the grain-workpiece contact zone; and yet, research studies on experimental investigations and modeling are currently lacking. In this direction, a temperature model is developed for the evaluation of the flash temperatures at the grain tip with respect to the grain penetration depth. An experimental single-grain scratch test setup is designed to validate the model that can emulate the long contact lengths as in the wire sawing process, at high speeds. Furthermore, the influence of brittle and ductile material removal modes on cutting zone temperatures is evaluated.

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“…Their model predicts subsurface damage processes when sawing silicon. Wang et al [14] proposed a model to predict subsurface microcrack damage depth (SSD) using a half-penny crack system. From this model, the relationship between SSD and feed rate, wire speed, abrasive size, and density of abrasives on the surface of saw wire was analyzed.…”

Section: Introducationmentioning

confidence: 99%

Dynamic Force Modeling of Wire Saw Machining Processes

Lie¹,

Wang³

et al. 2023

Preprint

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Wire saw machining is extensively used to cut hard and brittle materials because of the resulting narrow kerf size, low cutting forces, and minimal material waste. The change of cutting forces strongly affects the part surface quality. Current models compute static machining forces based on the process variables and cutting conditions. This paper builds a dynamic machining force model that includes the effect of the wire tension and describes how the force changes as the wire engages with the part and as the wire changes direction due to reciprocation. Machining of silicon monocrystal parts is used to experimentally validate the proposed dynamic force model. The results show a very good correlation between the simulated and experimental data. The model captures the transient effect of the machining forces as the wire becomes fully engaged with the part and it is able to capture the fluctuations in the normal force, which is due to the changes in wire tension, as the wire reciprocates.

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Analytical prediction of subsurface microcrack damage depth in diamond wire sawing silicon crystal

Cited by 44 publications

References 35 publications

Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales

Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales

Grain flash temperatures in diamond wire sawing of silicon

Dynamic Force Modeling of Wire Saw Machining Processes

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