Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries

Pandian, M. Karthigai; Balamurugan, N. B.

doi:10.5370/jeet.2014.9.6.2079

Cited by 12 publications

(11 citation statements)

References 29 publications

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“…These include expressions for the distribution of the channel potential covering all operation regions, from the subthreshold to the inversion region. As another representative approach, a parabolic approximation-called Young's approximation-in Cartesian and cylindrical coordinates is easily utilized to solve the Poisson equation in the inversion region [24,25]. In addition, the Young's approximation can be effectively used for the subthreshold region as well, where two-dimensional (2D) channel potential including SCEs can be modeled [26,27].…”

Section: Introductionmentioning

confidence: 99%

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Shin

Bae

Park

et al. 2018

Semicond. Sci. Technol.

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A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

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Section: Introductionmentioning

confidence: 99%

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Shin

Bae

Park

et al. 2018

Semicond. Sci. Technol.

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“…In this section, the theoretical and numerical simulation results are presented using Equations (27), (32), (35), and (40). The list of parameters used for the CSDG MOSFETs are given in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…In the subthreshold (weak inversion) regime, the 2D channel potential region, ψ (r, z) is determined from cylindrical Poisson's equation in the cylindrical coordinate system. Assuming uniform channel doping and the independency of the channel potential on the angle θ as highlighted by [14], the 2D Poisson equation (in cylindrical coordinate) is expressed as [32]:…”

Section: D Poisson Equationmentioning

confidence: 99%

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Analytical Performance of the Threshold Voltage and Subthreshold Swing of CSDG MOSFET

Maduagwu¹,

Srivastava²

2019

JLPEA

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In this research work, the threshold voltage and subthreshold swing of cylindrical surrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based on the analytical solution of 2D Poisson equation using evanescent-mode analysis (EMA). This EMA provides the better approach in solving the 2D Poisson equation by considering the oxide and Silicon regions as a two-dimensional problem, to produce physically consistent results with device simulation for better device performance. Unlike other models such as polynomial exponential and parabolic potential approximation (PPA) which consider the oxide and silicon as one-dimensional problem. Using the EMA, the 2D Poisson equation is decoupled into 1D Poisson equation which represent the long channel potential and 2D Laplace equation describing the impacts of short channel effects (SCEs) in the channel potential. Furthermore, the derived channel potential close-form expression is extended to determine the threshold voltage and subthreshold behavior of the proposed CSDG MOSFET device. This model has been evaluated with various device parameters such as radii Silicon film thickness, gate oxide thickness, and the channel length to analyze the behavior of the short channel effects in the proposed CSDG MOSFET. The accuracy of the derived expressions have been validated with the mathematical and numerical simulation.increases the packing density, and most importantly leads to better controllability of the gate over the channel [17,21]. The gate control results to enhancement of the subthreshold characteristics and greater immunity to SCEs. However, in terms of current drive the CSG MOSFETs have lesser current compared with the DG MOSFET, hence, its extensive use is limited for high performance application [22]. Thus, there is need to improve on the geometric structure of the CSG MOSFET to enhance the current drive, the gate control over the channel and further improve the SCEs immunity at the nanoscale regime.A novel structure, the cylindrical surrounding double gate (CSDG) MOSFET, was proposed by Srivastava et al. [12]. The geometry is similar to that of the CSG MOSFET with an internal core gate. The core gate enhances the channel control and improves the SCEs immunity. Additionally, the device allows for higher packing density and higher volume inversion than DG MOSFETs and CSG MOSFETs [23,24]. The explicit charge model based on the unified charge model was carried out by Srivastava et al. [25,26]. The authors analyzed the channel current for the novel structure to be higher than the single, DG MOSFET, and CSG MOSFET. However, the authors did not consider the subthreshold regime. Verma et al. [27] worked on the subthreshold regime of the CSDG MOSFET in which only the threshold voltage was analyzed.The proposed CSDG MOSFET is designed on a hollow concentric cylindrical structure in which a simple analytical channel potential model has been derived at subthreshold regime. The 2D Poisson equation is solved with the EMA as a boundary valued problem to obtain the mi...

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“…Analytical modeling of GAA MOSFET is done by solving cylindrical Poisson's equation, parabolic approximation method, and necessary boundary conditions [14][15][16][17][18][19].…”

Section: Analytical Modeling Of Gate All Around Nanowire Transistormentioning

confidence: 99%

Effects of the physical parameter on gate all around FET

2019

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As the devices are getting compact, the size of transistors reduces day by day; however, with certain limitations. Due to miniaturization, the characteristics of the transistor change due to quantum mechanical effects and the present scenario, analytically modeled surface potential-based gate all around (GAA) FET model by solving 1-D Poisson's equation, approximation method and using necessary boundary condition. Here, the change in channel material (Si, InP, GaAs, InAs and Ge), channel radius (varied from 6 nm to 10 nm), oxide thickness (changed from 2 nm to 5 nm), drain to source voltage (varied from-0.5 V to 0.5 V), Source/Drain doping (varied from 10 17 to 10 22 /cm 3) and temperature (from 0 to 300 K) of the transistor, surface potential changes from-1.6 V to 1.3 V approx. respectively, considered as the GAA FET parameters. The proposed novel model exhibits better control over hot carrier effect, Drain Induced Barrier Lowering (DIBL), reduced threshold voltage and other such short channel effects in the GAA FET. Moreover, the I-V characteristics of the GAA FET were analyzed. The MATLAB code is used for modeling of the GAA FET nanowire transistor.

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Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries

Cited by 12 publications

References 29 publications

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Analytical Performance of the Threshold Voltage and Subthreshold Swing of CSDG MOSFET

Effects of the physical parameter on gate all around FET

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