Anion–cation synergistic doping strategy on a Ga₂O₃ scaffold for improving electron extraction and transport in a CH₃NH₃PbCl₃-based photodetector

Abstract

The optimized electron transport layer by an anion–cation synergistic doping strategy has strikingly boosted the photoelectric performance of a polycrystalline CH3NH3PbCl3 device.

Spectrally narrow band-edge photoluminescence from AgInS2-based core/shell quantum dots for electroluminescence applications

“…Ga 2 O 3 , an oxide semiconductor with a wide bandgap in the range of 4.5-4.9 V, has been reviewed as a promising candidate for the next generation of power transistors that could outperform silicon carbide (SiC) and gallium nitride (GaN). [40][41][42][43][44] While Ga 2 O 3 has been utilized in several applications for emitting devices, [45][46][47][48] photovoltaics, 49,50 and wavelength conversion for a whitelight source, 51 its use in the ETL of OLEDs, as far as we know, is rather uncommon. 52 The expected CBM level is 3.32 eV, which is close to that of common ZnO (3.35 eV) and Zn 0.95 Mg 0.05 O (3.22 eV).…”

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

“…Recently, the solution-processable organic–inorganic hybrid perovskites, with the advantages of a large absorption coefficient, adjustable band gap, high defect tolerance, and long charge diffusion length, have also been successfully applied in broad-spectra, − X-ray, and visible-blind UV − photosensing demonstrations. In addition, the perovskites could be readily integrated with inorganic semiconductors and demonstrate a series of heterogeneous structures to boost the UV-sensing performance in ZnO-, , GaN-, − and Ga 2 O 3 - , based devices. Nevertheless, all of the above-described visible-blind UV PDs, regardless of whether they are based on inorganic semiconductors or perovskites, are typically demonstrated to have photoconductor or photodiode structures.…”